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M58BW016BB

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

STMICROELECTRONICS

意法半導(dǎo)體

M58BW016BB產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    M58BW016BB

  • 制造商

    STMICROELECTRONICS

  • 制造商全稱

    STMicroelectronics

  • 功能描述

    16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

更新時(shí)間:2025-9-17 10:21:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ST
16+
QFP
2500
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
ST
20+
QFP
500
樣品可出,優(yōu)勢(shì)庫存歡迎實(shí)單
ST
23+
QFP-80
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
ST
25+
QFP-80
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
ST/意法
2022+
QFP80
3000
原廠代理 終端免費(fèi)提供樣品
BOSCH
24+
QFP-80
618
ST
25+23+
PQFP80
22798
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
MITSUBIS
23+
BGAQFP
8659
原裝公司現(xiàn)貨!原裝正品價(jià)格優(yōu)勢(shì).
ST/意法
23+
QFP
50000
全新原裝正品現(xiàn)貨,支持訂貨
ST/意法
25+
QFP80
54658
百分百原裝現(xiàn)貨 實(shí)單必成

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