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型號	功能描述	生產(chǎn)廠家企業(yè)	LOGO
M29F400T	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-120M1R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-120M1TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-120M3R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-120M3TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-120M6R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-120M6TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-120N1R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-120N1TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-120N3R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-120N3TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-120N6R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-120N6TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-55M1R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-55M1TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-55M3R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-55M3TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-55M6R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-55M6TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-55N1R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-55N1TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-55N3R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-55N3TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-55N6R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-55N6TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-70M1R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-70M1TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-70M3R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-70M3TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-70M6R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-70M6TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-70N1R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-70N1TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-70N3R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-70N3TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-70N6R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-70N6TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-90M1R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-90M1TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-90M3R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-90M3TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-90M6R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-90M6TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-90N1R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-90N1TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-90N3R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-90N3TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-90N6R	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M29F400T-90N6TR	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
AM29F400AB	4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory GENERAL DESCRIPTION The Am29F400A is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each or 256 Kwords of 16 bits each. The 4 Mbits of data is divided into 11 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbytes, for flexible erase capability. The 8 bits	AMD 超威半導(dǎo)體	AMD
AM29F400AT	4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory GENERAL DESCRIPTION The Am29F400A is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each or 256 Kwords of 16 bits each. The 4 Mbits of data is divided into 11 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbytes, for flexible erase capability. The 8 bits	AMD 超威半導(dǎo)體	AMD
AM29F400B	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory GENERAL DESCRIPTION The Am29F400B is a 4 Mbit, 5.0 volt-only Flash memory organized as 524,288 bytes or 262,144 words. The device is offered in 44-pin SO and 48-pin TSOP packages. The device is also available in Known Good Die (KGD) form. For more information, refer to publication number 21258	AMD 超威半導(dǎo)體	AMD
AM29F400B	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 文件：870.13 Kbytes Page：43 Pages	AMD 超威半導(dǎo)體	AMD
AM29F400B	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 文件：911.65 Kbytes Page：42 Pages	AMD 超威半導(dǎo)體	AMD

M29F400T供應(yīng)商更多...

更新時間：2025-9-15 22:51:00

IC供應(yīng)商	芯片型號	品牌	批號	封裝	庫存	備注	價格
上海意淼電子科技有限公司	M29F400T-90N1	ST	23+	TSOP48	20000	全新原裝假一賠十	詢價
深圳市益百分電子有限公司	M29F400T-90N1	ST	97+	TSOP48	3560	全新原裝進(jìn)口自己庫存優(yōu)勢	詢價
深圳市威雅利發(fā)展有限公司	M29F400T-90N1	ST	9823+	TSSOP48	1	一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價
深圳市華睿芯科技有限公司	M29F400T-90N1	ST	24+	TSOP	20000	全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！	詢價
深圳市英卓爾科技有限公司	M29F400T-120N1	ST	20+	TSSOP	2960	誠信交易大量庫存現(xiàn)貨	詢價
深圳市聯(lián)世界科技有限公司	M29F400T-90N1	ST	24+/25+		91	原裝正品現(xiàn)貨庫存價優(yōu)	詢價
深圳市宏世佳電子科技有限公司	M29F400T-120N1	ST	2025+	TSSOP	3750	全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售	詢價
上海專毅電子科技有限公司	M29F400T-90N1	ST	17+	TSOP48	9988	只做原裝進(jìn)口,自己庫存	詢價
深圳市科達(dá)星科技有限公司	M29F400T-120N1	ST	24+	SSOP-48	37500	原裝正品現(xiàn)貨,價格有優(yōu)勢!	詢價
深圳市賽特興科技有限公司	M29F400T-120N1E	ST	23+	TSOP	16900	正規(guī)渠道,只有原裝!	詢價

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M29F400T規(guī)格書下載地址

M29F400T參數(shù)引腳圖相關(guān)

MP4
MP3
mos晶體管
mos管
MOSFET
molex連接器
mega16
MCU
mc34063
mb881
mb402
max7219
max706s
max485esa
max485csa
max3232cse
max232cse
max232
m628
m358
M2D2428
M2D2025
M2D1822
M2D160
M2BJ-BH
M2BJ-B
M2BC_15
M2B_15
M2AS1
M2AMS2
M2AMS
M2ADS
M2AC_15
M29W400
M29W160
M29W102
M29W040
M29W022
M29W004
M29F512
M29F400T-55N1TR
M29F400T-55N1R
M29F400T-55M6TR
M29F400T-55M6R
M29F400T-55M3TR
M29F400T-55M3R
M29F400T-55M1TR
M29F400T-55M1R
M29F400T-120N6TR
M29F400T-120N6R
M29F400T-120N3TR
M29F400T-120N3R
M29F400T-120N1TR
M29F400T-120N1R
M29F400T-120M6TR
M29F400T-120M6R
M29F400T-120M3TR
M29F400T-120M3R
M29F400T-120M1TR
M29F400T-120M1R
M29F400BT-90N6T
M29F400BT90N6T
M29F400BT90N6F
M29F400BT90N6E
M29F400BT-90N6
M29F400BT90N6
M29F400BT-90N3T
M29F400BT90N3T
M29F400BT90N3F
M29F400BT90N3E
M29F400BT-90N3
M29F400BT90N3
M29F400BT-90N1T
M29F400BT90N1T
M29F400BT90N1F
M29F400BT90N1E
M29F400BT-90N1
M29F400BT90N1
M29F400BT-90M6T
M29F400BT90M6T
M29F400
M29F200
M29F160
M29F100
M29F040
M29F010
M29F002
M2954
M2951
M2950
M293B1
M293010
M29150B
M29150A
M2904
M28W800
M28W640
M28ST-D
M28ST-C
M28ST-B

M29F400T數(shù)據(jù)表相關(guān)新聞

M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29
M29W128GL70ZS6E順德利科技正品原裝進(jìn)口穩(wěn)定的貨源優(yōu)勢的價格
深圳市順德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
M28W320FCT70N6E順德利科技正品原裝進(jìn)口穩(wěn)定的貨源優(yōu)勢的價格
深圳市順德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
M29W128GH70N6E順德利科技正品原裝進(jìn)口穩(wěn)定的貨源優(yōu)勢的價格
深圳市順德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
M29W128GL70N6E順德利科技正品原裝進(jìn)口穩(wěn)定的貨源優(yōu)勢的價格
深圳市順德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18

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