位置：首頁 > IC中文資料第39頁 > M29F400B
| 型號 | 功能描述 | 生產(chǎn)廠家 企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
M29F400B | 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 |   | |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半導(dǎo)體 | |
M29F400B產(chǎn)品屬性
- 類型
描述
- 型號
M29F400B
- 功能描述
閃存 512Kx8 or 256Kx16 90
- RoHS
否
- 制造商
ON Semiconductor
- 數(shù)據(jù)總線寬度
1 bit
- 存儲類型
Flash
- 存儲容量
2 MB
- 結(jié)構(gòu)
256 K x 8
- 接口類型
SPI
- 電源電壓-最大
3.6 V
- 電源電壓-最小
2.3 V
- 最大工作電流
15 mA
- 工作溫度
- 40 C to + 85 C
- 安裝風(fēng)格
SMD/SMT
- 封裝
Reel
| IC供應(yīng)商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TSOP |
20000 |
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！ |
|||
ST |
23+ |
SOP |
20000 |
原裝進(jìn)口ICMCUSOCMOS等知名國內(nèi)外品牌只做原裝全 |
|||
MICRON/美光 |
25+ |
N/A |
12496 |
MICRON/美光原裝正品M29F400BB70N6即刻詢購立享優(yōu)惠#長期有貨 |
|||
STMicroelect |
24+ |
TSOP |
37500 |
原裝正品現(xiàn)貨,價格有優(yōu)勢! |
|||
MAX |
24+/25+ |
SOP |
4795 |
原裝正品現(xiàn)貨庫存價優(yōu) |
|||
ST |
24+ |
TSOP48 |
7850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
|||
TI/德州儀器 |
25+ |
TSOP40 |
58788 |
百分百原裝現(xiàn)貨 實(shí)單必成 歡迎詢價 |
|||
ST |
23+ |
TSOP |
50000 |
只做原裝正品 |
|||
ST |
00+ |
TSOP-48 |
3436 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
ST |
2016+ |
SOP-44 |
2590 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
M29F400B芯片相關(guān)品牌
M29F400B規(guī)格書下載地址
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M29F400B數(shù)據(jù)表相關(guān)新聞
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E順德利科技正品原裝進(jìn)口穩(wěn)定的貨源優(yōu)勢的價格
深圳市順德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M28W320FCT70N6E順德利科技正品原裝進(jìn)口穩(wěn)定的貨源優(yōu)勢的價格
深圳市順德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GH70N6E順德利科技正品原裝進(jìn)口穩(wěn)定的貨源優(yōu)勢的價格
深圳市順德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GL70N6E順德利科技正品原裝進(jìn)口穩(wěn)定的貨源優(yōu)勢的價格
深圳市順德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
DdatasheetPDF頁碼索引
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