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型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
M29DW128F70NF1

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半導(dǎo)體

M29DW128F70NF1

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件：756.04 Kbytes Page：94 Pages

STMICROELECTRONICS

意法半導(dǎo)體

M29DW128F70NF1

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件：1.78901 Mbytes Page：94 Pages

NUMONYX

numonyx

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半導(dǎo)體

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半導(dǎo)體

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半導(dǎo)體

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件：756.04 Kbytes Page：94 Pages

STMICROELECTRONICS

意法半導(dǎo)體

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件：1.78901 Mbytes Page：94 Pages

NUMONYX

numonyx

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件：756.04 Kbytes Page：94 Pages

STMICROELECTRONICS

意法半導(dǎo)體

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件：1.78901 Mbytes Page：94 Pages

NUMONYX

numonyx

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件：1.78901 Mbytes Page：94 Pages

NUMONYX

numonyx

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件：756.04 Kbytes Page：94 Pages

STMICROELECTRONICS

意法半導(dǎo)體

M29DW128F70NF1產(chǎn)品屬性

  • 類型

    描述

  • 型號

    M29DW128F70NF1

  • 制造商

    NUMONYX

  • 制造商全稱

    Numonyx B.V

  • 功能描述

    128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

更新時間：2025-8-23 23:01:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
ST/PBF
24+
NA/
446
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
ST
23+
NA
20000
全新原裝假一賠十
ST/意法
25+
FBGA
996880
只做原裝,歡迎來電資詢
ST/PBF
24+
TSSOP
880000
明嘉萊只做原裝正品現(xiàn)貨
ST/PBF
0719+
TSSOP
446
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
ST/意法
24+
FBGA
35472
只做原裝 公司現(xiàn)貨庫存
ST/意法
23+
TSOP
7685
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
ST
23+
FBGA
16900
正規(guī)渠道,只有原裝!
ST
20+
TSOP
2960
誠信交易大量庫存現(xiàn)貨
STM
BGA64
53650
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨

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