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型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
M28W160ECB100ZB6T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

M28W160ECB100ZB6T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

M28W160ECB100ZB6T產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    M28W160ECB100ZB6T

  • 制造商

    STMICROELECTRONICS

  • 制造商全稱

    STMicroelectronics

  • 功能描述

    16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory

更新時(shí)間：2025-9-19 23:01:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ST/意法
24+
NA/
3408
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
ST
23+
TFBGA
20000
全新原裝假一賠十
ST
17+
BGA
100
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
ST
21+
FBA
1523
公司現(xiàn)貨,不止網(wǎng)上數(shù)量!原裝正品,假一賠十!
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
ST MICROELECTRONICS
0421
9
公司優(yōu)勢庫存 熱賣中!
ST(意法)
25+
封裝
500000
源自原廠成本,高價(jià)回收工廠呆滯
MICRON
2025+
TFBGA-46
3685
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
MICRON
25+23+
TFBGA46
36205
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
Micron Technology Inc.
21+
60-TFBGA
5280
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價(jià)格(誠信經(jīng)營

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