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M28W160CB70N6價(jià)格

參考價(jià)格：￥8.2081

型號：M28W160CB70N6E 品牌：Micron 備注：這里有M28W160CB70N6多少錢，2025年最近7天走勢，今日出價(jià)，今日競價(jià)，M28W160CB70N6批發(fā)/采購報(bào)價(jià)，M28W160CB70N6行情走勢銷售排行榜，M28W160CB70N6報(bào)價(jià)。
型號 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
M28W160CB70N6

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

M28W160CB70N6

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

NUMONYX

numonyx

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

STMICROELECTRONICS

意法半導(dǎo)體

PARALLEL 16M X16 TSOP

Micron

美光

封裝/外殼：48-TFSOP（0.724"，18.40mm 寬） 包裝：管件 描述：IC FLASH 16MBIT PARALLEL 48TSOP 集成電路（IC） 存儲(chǔ)器

ETC

知名廠家

SLC 16M X16 TSOP

Micron

美光

封裝/外殼：48-TFSOP（0.724"，18.40mm 寬） 包裝：管件 描述：IC FLASH 16MBIT PARALLEL 48TSOP 集成電路（IC） 存儲(chǔ)器

ETC

知名廠家

M28W160CB70N6產(chǎn)品屬性

  • 類型

    描述

  • 型號

    M28W160CB70N6

  • 功能描述

    閃存 16M(1Mx16) 70ns

  • RoHS

    否

  • 制造商

    ON Semiconductor

  • 數(shù)據(jù)總線寬度

    1 bit

  • 存儲(chǔ)類型

    Flash

  • 存儲(chǔ)容量

    2 MB

  • 結(jié)構(gòu)

    256 K x 8

  • 接口類型

    SPI

  • 電源電壓-最大

    3.6 V

  • 電源電壓-最小

    2.3 V

  • 最大工作電流

    15 mA

  • 工作溫度

    - 40 C to + 85 C

  • 安裝風(fēng)格

    SMD/SMT

  • 封裝

    Reel

更新時(shí)間：2025-9-13 13:19:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價(jià)格
MICRON/鎂光
25+
原廠封裝
10280
原廠授權(quán)一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力!
ST/意法
2404+
TSOP48
3300
現(xiàn)貨正品原裝,假一賠十
MICRON/美光
22+
NA
3000
支持任何機(jī)構(gòu)檢測 只做原裝正品
STM
TSSOP
6688
15
現(xiàn)貨庫存
ST
23+
TSSOP
50000
全新原裝正品現(xiàn)貨,支持訂貨
MICRON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
ST(意法)
2511
4945
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價(jià)
ST(意法)
24+
N/A
7678
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div>
micron(鎂光)
24+
標(biāo)準(zhǔn)封裝
13048
全新原裝正品/價(jià)格優(yōu)惠/質(zhì)量保障
ST/意法
25+
TSOP48
32360
ST/意法全新特價(jià)M28W160CB70N6E即刻詢購立享優(yōu)惠#長期有貨

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