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High-Voltage, High- Current Darlington Transistor Array

Featues High-voltage (VCEO≥ 50V), large-current (ICmax = 500 mA) drive LB1231 ? Drivable by TTL, MOS output LB1232 ? Contains base current limiting resistors,Zener diodes for level shift ? Direct drivable by 24V P MOS LB1233 ? Contains base current limiting resistors.

High-Voltage, High- Current Darlington Transistor Array

Featues High-voltage (VCEO≥ 50V), large-current (ICmax = 500 mA) drive LB1231 ? Drivable by TTL, MOS output LB1232 ? Contains base current limiting resistors,Zener diodes for level shift ? Direct drivable by 24V P MOS LB1233 ? Contains base current limiting resistors.

High-Voltage, High- Current Darlington Transistor Array

Featues High-voltage (VCEO≥ 50V), large-current (ICmax = 500 mA) drive LB1231 ? Drivable by TTL, MOS output LB1232 ? Contains base current limiting resistors,Zener diodes for level shift ? Direct drivable by 24V P MOS LB1233 ? Contains base current limiting resistors.

LB1233M

Overview The LB1233M is a Darlington transistor array using NPN transistors. It is suitable for applications such as hammer drive, lamp control, relay drive, etc. It also incorporates a spark killer diode for the L load. Features ? Designed for high voltage (VCEO ≥50V), large current

High-Voltage, High- Current Darlington Transistor Array

Featues High-voltage (VCEO≥ 50V), large-current (ICmax = 500 mA) drive LB1231 ? Drivable by TTL, MOS output LB1232 ? Contains base current limiting resistors,Zener diodes for level shift ? Direct drivable by 24V P MOS LB1233 ? Contains base current limiting resistors.

High-Voltage, High-Current Darlington Driver?

Fucntions and Features ? 4-channel, high-voltage (65V), high-current (1.5A) Darlington driver. ? On-chip spark killer diodes. ? Capable of being direct driven with 5V-operated TTL. ? NPN input high-active type.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for high voltage, high speed switching circuits, and amplifier applications.

NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free * High voltage, high speed power switch * Switch regulators * PWM inverter and Motor controls * Solenoid and relay drivers * Deflection circuits

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for high voltage, high speed switching circuits, and amplifier applications.

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.010 Wall, Nom. MPPE 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Components Cabled

Customer SpecificationS

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.010 Wall, Nom. MPPE 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Components Cabled

M.2 Socket, H2.1 A Key 0.5 Pitch G/F, Black, Reel

Performance and Descriptions: The product is designed to meet the electrical, mechanical and environmental performance requirements specification. Unless otherwise specified, all tests are performed at ambient environmental conditions.

General Purpose Tweezers

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3.6V/400mAh

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