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型號 功能描述 生產廠家&企業(yè) LOGO 操作
K9F1208D0B-Y

64M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on

Samsung

三星

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical

Samsung

三星

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical

Samsung

三星

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical

Samsung

三星

64M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on

Samsung

三星

64M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on

Samsung

三星

K9F1208D0B-Y產品屬性

  • 類型

    描述

  • 型號

    K9F1208D0B-Y

  • 制造商

    SAMSUNG

  • 制造商全稱

    Samsung semiconductor

  • 功能描述

    64M x 8 Bit NAND Flash Memory

更新時間：2025-9-3 23:01:00
IC供應商 芯片型號 品牌 批號 封裝 庫存 備注 價格
SAMSUNG/三星
24+
NA/
58
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
SAMSUNG
2016+
BGA
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
ON/MOT
23+
大鐵帽
6500
全新原裝假一賠十
SAMSUNG/三星
25+
FBGA
996880
只做原裝,歡迎來電資詢
TSOP
22+
ALTERA
30000
十七年VIP會員,誠信經營，一手貨源，原裝正品可零售！
SAMSUNG/三星
23+
FBGA
98900
原廠原裝正品現(xiàn)貨!!
Samsung
2016+
FBGA
6528
只做進口原裝現(xiàn)貨!或訂貨,假一賠十!
SAMSUNG/三星
24+
FBGA
13718
只做原裝 公司現(xiàn)貨庫存
SAMSUNG
24+
BGA
3000
全新原裝現(xiàn)貨 優(yōu)勢庫存
SAMSUNG
22+
BGA
8000
原裝正品支持實單

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K9F1208D0B-Y規(guī)格書下載地址

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