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IXTY01N100D價(jià)格

參考價(jià)格：￥7.1344

型號(hào)：IXTY01N100D 品牌：IXYS 備注：這里有IXTY01N100D多少錢(qián)，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，IXTY01N100D批發(fā)/采購(gòu)報(bào)價(jià)，IXTY01N100D行情走勢(shì)銷(xiāo)售排行榜，IXTY01N100D報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠(chǎng)家&企業(yè) LOGO 操作
IXTY01N100D

N-Channel, Depletion Mode High Voltage MOSFET

High Voltage MOSFET N-Channel, Depletion Mode Features ● Normally ON mode ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators

IXYS

艾賽斯

IXTY01N100D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=0.1A@ TC=25℃ ·Drain Source Voltage -VDSS=1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) =110Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

無(wú)錫固電

IXTY01N100D

Power MOSFET

文件：164.45 Kbytes Page：6 Pages

IXYS

艾賽斯

Power MOSFET

文件：164.45 Kbytes Page：6 Pages

IXYS

艾賽斯

High Voltage MOSFET

High Voltage MOSFET N-Channel, Depletion Mode Features ● Normally ON mode ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators

IXYS

艾賽斯

N-Channel, Depletion Mode High Voltage MOSFET

High Voltage MOSFET N-Channel, Depletion Mode Features ● Normally ON mode ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators

IXYS

艾賽斯

High Voltage MOSFET

High Voltage MOSFET N-Channel, Depletion Mode Features ● Normally ON mode ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators

IXYS

艾賽斯

High Voltage MOSFET N-Channel, Enhancement Mode

High Voltage MOSFET N-Channel, Enhancement Mode Features ? International standard packages JEDEC TO-251 AA, TO-252 AA ? Low RDS (on) HDMOSTM process ? Rugged polysilicon gate cell structure ? Fast switching times Applications ? Level shifting ? Triggers ? Solid state relays ? Current re

IXYS

艾賽斯

Power MOSFET

文件：164.45 Kbytes Page：6 Pages

IXYS

艾賽斯

IXTY01N100D產(chǎn)品屬性

  • 類(lèi)型

    描述

  • 型號(hào)

    IXTY01N100D

  • 功能描述

    MOSFET MOSFET N-CH DEPLETN 1000V 100MA TO-25

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶體管極性

    N-Channel

  • 汲極/源極擊穿電壓

    650 V

  • 閘/源擊穿電壓

    25 V

  • 漏極連續(xù)電流

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）

    0.014 Ohms

  • 配置

    Single

  • 安裝風(fēng)格

    Through Hole

  • 封裝/箱體

    Max247

  • 封裝

    Tube

更新時(shí)間：2025-8-14 20:21:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
IXYS/艾賽斯
21+
TO-252
10000
原裝現(xiàn)貨假一罰十
IXYS
08+
TO-252
19000
普通
IXYS
1932+
TO-252
1026
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
IXYS
兩年內(nèi)
NA
24
實(shí)單價(jià)格可談
IXYS/艾賽斯
24+
TO-252
501565
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
IXYS
23+
TO-252
5000
原裝正品!假一罰十!
IXYS/艾賽斯
2022+
TO-252
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
IXYS
25+23+
TO-252
28372
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
IXYS
24+
TO-252
724
原廠(chǎng)直供,支持賬期,免費(fèi)供樣,技術(shù)支持
IXYS/艾賽斯
24+
TO-252
19000
只做原廠(chǎng)渠道 可追溯貨源

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