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型號 | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
---|---|---|---|---|
IXTP3N110 | High Voltage Power MOSFETs Features ● International standard packages ● Low RDS (on) ● Rated for unclamped Inductive load Switching (UIS) ● Molding epoxies meet UL 94 V-0 flammability classification Advantages ● Easy to mount ● Space savings ● High power density | IXYS 艾賽斯 | ||
High Voltage Power MOSFETs Features ● International standard packages ● Low RDS (on) ● Rated for unclamped Inductive load Switching (UIS) ● Molding epoxies meet UL 94 V-0 flammability classification Advantages ● Easy to mount ● Space savings ● High power density | IXYS 艾賽斯 | |||
NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS 文件:148.75 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 |
IXTP3N110產(chǎn)品屬性
- 類型
描述
- 型號
IXTP3N110
- 功能描述
MOSFET 3 Amps 1100V 4 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶體管極性
N-Channel
- 汲極/源極擊穿電壓
650 V
- 閘/源擊穿電壓
25 V
- 漏極連續(xù)電流
130 A 電阻汲極/源極
- RDS(導通)
0.014 Ohms
- 配置
Single
- 安裝風格
Through Hole
- 封裝/箱體
Max247
- 封裝
Tube
IC供應商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IXYS/艾賽斯 |
21+ |
TO220 |
10000 |
原裝現(xiàn)貨假一罰十 |
|||
IXYS |
1421+ |
TO220 |
40 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
IXYS/艾賽斯 |
22+ |
TO-220 |
100000 |
代理渠道/只做原裝/可含稅 |
|||
IXYS |
1822+ |
TO-220 |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
|||
IXYS |
25+ |
TO-220 |
2000 |
原廠原裝,價格優(yōu)勢 |
|||
IXYS/艾賽斯 |
2022+ |
TO-220 |
30000 |
進口原裝現(xiàn)貨供應,原裝 假一罰十 |
|||
IXYS/艾賽斯 |
23+ |
TO-220 |
30000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
|||
IXYS/艾賽斯 |
23+ |
TO220 |
3000 |
正規(guī)渠道,只有原裝! |
|||
IXYS/艾賽斯 |
2023+ |
TO-220 |
1000 |
專注全新正品,優(yōu)勢現(xiàn)貨供應 |
|||
IXYS |
23+ |
TO-220 |
5000 |
原裝正品,假一罰十 |
IXTP3N110芯片相關(guān)品牌
IXTP3N110規(guī)格書下載地址
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2018-12-28
DdatasheetPDF頁碼索引
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