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型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
IXGA7N60B

HiPerFAST IGBT

Features ? International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB ? Medium frequency IGBT ? High current handling capability ? HiPerFASTTM HDMOSTM process ? MOS Gate turn-on - drive simplicity Applications ? Uninterruptible power supplies (UPS) ?

IXYS

艾賽斯

IXGA7N60B

封裝/外殼：TO-263-3，D2Pak（2 引線 + 接片），TO-263AB 包裝：管件 描述：IGBT 600V 14A 54W TO263 分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單

IXYS

艾賽斯

IXGA7N60B

PT 中頻 IGBT

Littelfuse

力特

HiPerFAST IGBT with Diode

Features ? International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB ? High current handling capability ? HiPerFASTTM HDMOSTM process ? MOS Gate turn-on - drive simplicity Applications ? Uninterruptible power supplies (UPS) ? Switched-mode and resonant-m

IXYS

艾賽斯

HiPerFAST IGBT with Diode

文件：84.46 Kbytes Page：2 Pages

IXYS

艾賽斯

封裝/外殼：TO-263-3，D2Pak（2 引線 + 接片），TO-263AB 包裝：管件 描述：IGBT 600V 14A 80W TO263 分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單

IXYS

艾賽斯

PT IGBTs

Littelfuse

力特

7.4 Amps, 600 Volts N-CHANNEL MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UTC

友順

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

UTC

友順

7 Amps竊?00Volts N-Channel MOSFET

■ Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features ● RDS(ON) = 1.20?@VGS = 10 V ● Low gate cha

ESTEK

伊泰克電子

isc N-Channel Mosfet Transistor

? DESCRITION ? Designed for high efficiency switch mode power supply. ? FEATURES ? Drain Current –ID= 7A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ? Avalanche Energy Specified ? Fast Switching ? Simple Drive Requirem

ISC

無(wú)錫固電

7A 600V N-channel Enhancement Mode Power MOSFET

文件：898.89 Kbytes Page：11 Pages

WXDH

東海半導(dǎo)體

IXGA7N60B產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    IXGA7N60B

  • 功能描述

    IGBT 晶體管 14 Amps 600V 2.0 Rds

  • RoHS

    否

  • 制造商

    Fairchild Semiconductor

  • 配置

    集電極—發(fā)射極最大電壓

  • VCEO

    650 V

  • 集電極—射極飽和電壓

    2.3 V

  • 柵極/發(fā)射極最大電壓

    20 V 在25

  • C的連續(xù)集電極電流

    150 A

  • 柵極—射極漏泄電流

    400 nA

  • 功率耗散

    187 W

  • 封裝/箱體

    TO-247

  • 封裝

    Tube

更新時(shí)間：2025-9-19 16:33:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
IXYS
24+
TO-263(D2PAK)
8866
IXYS/艾賽斯
23+
TO-263
6000
原裝正品，支持實(shí)單
IXYS
25+
TO-263
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
IXYS
23+
TO-263
67784
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
IXYS/艾賽斯
17+
TO-263(D2PAK)
31518
原裝正品 可含稅交易
JINGDAO/晶導(dǎo)微
23+
TO-252
69820
終端可以免費(fèi)供樣,支持BOM配單!
IXYS
1809+
TO-263
1675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!

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