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型號(hào) 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
IXFK100N25

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs Single MOSFET Die Features ? International standard packages ? Low RDS (on) HDMOSTM process ? Rugged polysilicon gate cell structure ? Unclamped Inductive Switching (UIS) rated ? Low package inductance - easy to drive and to protect ? Fast intrinsic rectifier Ap

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IXFK100N25

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 27mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

ISC

無錫固電

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low

HiPerFET Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ? International standard package ? miniBLOC, with Aluminium nitride isolation ? Low RDS (on) HDMOSTM process ? Rugged polysilicon gate cell structure ? Unclamped Inductive Swi

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HiPerFET Power MOSFETs ISOPLUS247

HiPerFET? Power MOSFETs ISOPLUS247? (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ? Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ? Low d

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PolarHT HiPerFET Power MOSFET

文件:100.86 Kbytes Page:5 Pages

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IXFK100N25產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    IXFK100N25

  • 功能描述

    MOSFET 100 Amps 250V 0.027 Rds

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶體管極性

    N-Channel

  • 汲極/源極擊穿電壓

    650 V

  • 閘/源擊穿電壓

    25 V

  • 漏極連續(xù)電流

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通)

    0.014 Ohms

  • 配置

    Single

  • 安裝風(fēng)格

    Through Hole

  • 封裝/箱體

    Max247

  • 封裝

    Tube

更新時(shí)間:2025-8-31 16:10:00
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