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型號 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
IXFA26N50P3

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features ● Fast Intrinsic Rectifier ● Avalanche Rated ● Low RDS(ON) and QG ● Low Package Inductance Advantages ● High Power Density ● Easy to Mount ● Space Savings Applications ● Switch-Mode and Resonant-Mode Power Su

IXYS

艾賽斯

IXFA26N50P3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

無錫固電

IXFA26N50P3

N通道HiPerFET

Littelfuse

力特

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features ● Fast Intrinsic Rectifier ● Avalanche Rated ● Low RDS(ON) and QG ● Low Package Inductance Advantages ● High Power Density ● Easy to Mount ● Space Savings Applications ● Switch-Mode and Resonant-Mode Power Su

IXYS

艾賽斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 265mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

ISC

無錫固電

IXFA26N50P3產(chǎn)品屬性

  • 類型

    描述

  • 型號

    IXFA26N50P3

  • 功能描述

    MOSFET

  • N-Channel

    Power MOSFET w/Fast Diode

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶體管極性

    N-Channel

  • 汲極/源極擊穿電壓

    650 V

  • 閘/源擊穿電壓

    25 V

  • 漏極連續(xù)電流

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）

    0.014 Ohms

  • 配置

    Single

  • 安裝風(fēng)格

    Through Hole

  • 封裝/箱體

    Max247

  • 封裝

    Tube

更新時(shí)間：2025-9-12 11:34:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價(jià)格
IXYS/艾賽斯
23+
TO-263
65000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
24+
N/A
51000
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
IXYS(艾賽斯)
23+
N/A
7500
IXYS(艾賽斯)全系列在售
IXYS/艾賽斯
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
IXYS
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
NK/南科功率
2025+
TO-263-2
986966
國產(chǎn)
IXYS
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
IXYS/LITTELFUSE
1927
TO-263
15800
全新原裝正品現(xiàn)貨直銷
IXYS/艾賽斯
23+
TO-263
32189
原裝正品 華強(qiáng)現(xiàn)貨
Littelfuse/IXYS
24+
TO263
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!

IXFA26N50P3芯片相關(guān)品牌

IXFA26N50P3規(guī)格書下載地址

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