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| 型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
ISL73023SEH | 100V, 60A Enhancement Mode GaN Power Transistor Features ? Very low rDS(ON) 5mΩ (typical) ? Ultra low total gate charge 14nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV?cm2/mg ? ISL70023SEH radiation accepting testing ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Low dose rate | RENESAS 瑞薩 |   | |
ISL73023SEH | 100V, 60A Enhancement Mode GaN Power Transistor Features ? Very low rDS(ON) 5mΩ (typical) ? Ultra low total gate charge 14nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV?cm2/mg(Si) ? ISL70023SEH radiation accepting testing ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Low dose r | RENESAS 瑞薩 | | |
100V, 60A Enhancement Mode GaN Power Transistor Features ? Very low rDS(ON) 5mΩ (typical) ? Ultra low total gate charge 14nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV?cm2/mg ? ISL70023SEH radiation accepting testing ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Low dose rate | RENESAS 瑞薩 | | ||
100V, 60A Enhancement Mode GaN Power Transistor Features ? Very low rDS(ON) 5mΩ (typical) ? Ultra low total gate charge 14nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV?cm2/mg(Si) ? ISL70023SEH radiation accepting testing ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Low dose r | RENESAS 瑞薩 | | ||
100V, 60A Enhancement Mode GaN Power Transistor Features ? Very low rDS(ON) 5mΩ (typical) ? Ultra low total gate charge 14nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV?cm2/mg ? ISL70023SEH radiation accepting testing ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Low dose rate | RENESAS 瑞薩 | | ||
100V, 60A Enhancement Mode GaN Power Transistor Features ? Very low rDS(ON) 5mΩ (typical) ? Ultra low total gate charge 14nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV?cm2/mg(Si) ? ISL70023SEH radiation accepting testing ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Low dose r | RENESAS 瑞薩 | | ||
100V, 60A Enhancement Mode GaN Power Transistor Features ? Very low rDS(ON) 5mΩ (typical) ? Ultra low total gate charge 14nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV?cm2/mg ? ISL70023SEH radiation accepting testing ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Low dose rate | RENESAS 瑞薩 | | ||
100V, 60A Enhancement Mode GaN Power Transistor Features ? Very low rDS(ON) 5mΩ (typical) ? Ultra low total gate charge 14nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV?cm2/mg ? ISL70023SEH radiation accepting testing ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Low dose rate | RENESAS 瑞薩 | | ||
100V, 60A Enhancement Mode GaN Power Transistor Features ? Very low rDS(ON) 5mΩ (typical) ? Ultra low total gate charge 14nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV?cm2/mg(Si) ? ISL70023SEH radiation accepting testing ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Low dose r | RENESAS 瑞薩 | | ||
100V, 60A Enhancement Mode GaN Power Transistor Features ? Very low rDS(ON) 5mΩ (typical) ? Ultra low total gate charge 14nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV?cm2/mg ? ISL70023SEH radiation accepting testing ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Low dose rate | RENESAS 瑞薩 | | ||
100V, 60A Enhancement Mode GaN Power Transistor Features ? Very low rDS(ON) 5mΩ (typical) ? Ultra low total gate charge 14nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV?cm2/mg(Si) ? ISL70023SEH radiation accepting testing ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Low dose r | RENESAS 瑞薩 | | ||
100V, 60A Enhancement Mode GaN Power Transistor Features ? Very low rDS(ON) 5mΩ (typical) ? Ultra low total gate charge 14nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV?cm2/mg ? ISL70023SEH radiation accepting testing ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Low dose rate | RENESAS 瑞薩 | | ||
MMCX PLUG STRAIGHT CRIMP, RG174, 316 文件：148.42 Kbytes Page：2 Pages | POMONA Pomona Electronics | |
| IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
24+ |
BGA |
960 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
|||
INTERSIL |
25+ |
160 |
原廠原裝,價(jià)格優(yōu)勢(shì) |
||||
INTERSIL |
23+ |
20 |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
|||
INTERSIL |
三年內(nèi) |
1983 |
只做原裝正品 |
||||
RENESAS |
22+ |
SOP |
15000 |
瑞薩全系列在售,大代理渠道直供 |
|||
INTERSIL |
2447 |
20 |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
|||
RENESAS |
22+ |
SOP |
6000 |
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu) |
|||
INTERSIL |
24+ |
NA |
10021 |
只做原裝正品現(xiàn)貨 歡迎來(lái)電查詢15919825718 |
|||
INTERSI |
24+ |
N/A |
90000 |
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理 |
|||
RENESAS |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
ISL73023SEH芯片相關(guān)品牌
ISL73023SEH規(guī)格書下載地址
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