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IS41價格

參考價格：￥5.0436

型號：IS410-4-XP 品牌：Marathon/Kulka 備注：這里有IS41多少錢，2025年最近7天走勢，今日出價，今日競價，IS41批發(fā)/采購報價，IS41行情走勢銷售排行榜，IS41報價。

型號	功能描述	生產(chǎn)廠家企業(yè)	LOGO
IS410	Lead-free Epoxy Laminate and Prepreg PRODUCT FEATURES Industry Recognition UL File Number: E41625 RoHS Compliant Performance Attributes Lead-free assembly compatible 6x 288°C solder float capable Processing Advantages FR-4 process compatible	ISOLA	ISOLA
IS41C16100	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半導(dǎo)體	ISSI
IS41C16100-50K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半導(dǎo)體	ISSI
IS41C16100-50KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半導(dǎo)體	ISSI
IS41C16100-50T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半導(dǎo)體	ISSI
IS41C16100-50TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半導(dǎo)體	ISSI
IS41C16100-60K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半導(dǎo)體	ISSI
IS41C16100-60KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半導(dǎo)體	ISSI
IS41C16100-60T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半導(dǎo)體	ISSI
IS41C16100-60TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半導(dǎo)體	ISSI
IS41C16100C	16Mb DRAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100CandIS41LV16100Care1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer a cycle access called Extended Data Out (EDO) Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 3	ISSI 矽成半導(dǎo)體	ISSI
IS41C16100S	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-45K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-45KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-45T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-45TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-50K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-50KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-50T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-50TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-60K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-60KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-60T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-60TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16105	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半導(dǎo)體	ISSI
IS41C16105	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105-50K	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半導(dǎo)體	ISSI
IS41C16105-50K	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105-50KE	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半導(dǎo)體	ISSI
IS41C16105-50KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105-50KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半導(dǎo)體	ISSI
IS41C16105-50T	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半導(dǎo)體	ISSI
IS41C16105-50T	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105-50TE	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半導(dǎo)體	ISSI
IS41C16105-50TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半導(dǎo)體	ISSI
IS41C16105-50TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105-60K	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半導(dǎo)體	ISSI
IS41C16105-60K	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105-60KE	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半導(dǎo)體	ISSI
IS41C16105-60KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半導(dǎo)體	ISSI
IS41C16105-60KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105-60T	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半導(dǎo)體	ISSI
IS41C16105-60T	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105-60TE	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半導(dǎo)體	ISSI
IS41C16105-60TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半導(dǎo)體	ISSI
IS41C16105-60TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105C	16Mb DRAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105C and IS41LV16105C are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. It is asynchronous, as it does not require a clo	ISSI 矽成半導(dǎo)體	ISSI
IS41C16128	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半導(dǎo)體	ISSI
IS41C16128-35K	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半導(dǎo)體	ISSI
IS41C16128-35KI	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半導(dǎo)體	ISSI
IS41C16128-35T	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半導(dǎo)體	ISSI
IS41C16128-35TI	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半導(dǎo)體	ISSI
IS41C16128-40K	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半導(dǎo)體	ISSI
IS41C16128-40KI	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半導(dǎo)體	ISSI
IS41C16128-40T	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半導(dǎo)體	ISSI
IS41C16128-40TI	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半導(dǎo)體	ISSI
IS41C16128-45K	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半導(dǎo)體	ISSI
IS41C16128-45KI	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半導(dǎo)體	ISSI
IS41C16128-45T	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半導(dǎo)體	ISSI
IS41C16128-45TI	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半導(dǎo)體	ISSI

IS41產(chǎn)品屬性

類型
描述
型號
IS41
制造商
IDEC Corporation
功能描述
SENS.IND. 10-30VDC NPN NO

IS41供應(yīng)商更多...

更新時間：2025-9-16 18:24:00

IC供應(yīng)商	芯片型號	品牌	批號	封裝	庫存	備注	價格
深圳市科芯源微電子有限公司	IS4100	ISOCOM	25+	SOP16	65248	百分百原裝現(xiàn)貨實(shí)單必成	詢價
諦輝(北京/上海/青島 )電子科技有限公司	IS416A-2ZI	ISSI	25+	MSOP8	18000	原廠直接發(fā)貨進(jìn)口原裝	詢價
深圳市福田區(qū)綠盛電子商行	IS41C16100-35K	ISSI	2015+	DIP/SMD	19889	一級代理原裝現(xiàn)貨,特價熱賣!	詢價
深圳市星宇佳科技有限公司	IS416A-2ZLI	ISSI	1112PB	MSOP8	750		詢價
深圳市昊創(chuàng)電子有限公司	IS41C16100-50K	ISSI	1824+	SOJ-42	3000	原裝現(xiàn)貨專業(yè)代理,可以代拷程序	詢價
深圳市卓越微芯電子有限公司	IS41C16100-50K	ISSI	25+	SOJ-24	60	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價
深圳市勝彬電子有限公司	IS4128-3GI	ISSI	22+	SOP	8000	原裝正品支持實(shí)單	詢價
深圳市佳鑫美電子科技有限公司	IS41C1610050K	ISSI	25+	SOJ	4500	原裝正品!公司現(xiàn)貨!歡迎來電!	詢價
深圳市一線半導(dǎo)體有限公司	IS416A-2ZI	ISSI	24+	MSOP8	1182		詢價
深圳市富誠威科技有限公司	IS41C16100-50K	ISSI	25+	SOJ-42	4650		詢價

IS41芯片相關(guān)品牌

IS41規(guī)格書下載地址

IS41參數(shù)引腳圖相關(guān)

l101
l100
ku波段
kt250
kse13005
ks20
km710
ka5q1265rf
k9f1208
k310
k2698
k233
k2055
k2010
jumper
jtag接口
jk觸發(fā)器
j111
j108
isd1420
IS457
IS456
IS455
IS452
IS450
IS445
IS440F
IS440
IS438
IS437
IS436
IS435
IS432
IS431
IS42SM
IS42S16100E-7TL
IS42S16100E-7BLI
IS42S16100E-7BL
IS42S16100E-6TLI
IS42S16100E-6TL
IS42S16100E-5TL
IS42RM32400G-75BLI
IS42RM16800G-75BLI
IS423
IS422
IS421
IS420
IS41LV16105C-50TLI
IS41LV16105C-50KLI
IS41LV16100C-50TLI
IS41LV16100C-50KLI-TR
IS41LV16100C-50KLI
IS41C16105C-50KLI
IS41C16100C-50TLI
IS41C16100C-50KLI
IS410-Y-6
IS410S
IS410-5-XP
IS410-4-XP
IS4100
IS3H7
IS3H4
IS3H&K
IS3H&J
IS3H&I
IS3H&H
IS3H&GR
IS3H&GB
IS3H&F
IS3H&E
IS3H&D
IS3H&C
IS3H&B
IS3H&A
IS39LV512-70VCE
IS39LV512-70JCE
IS39LV010-70VCE
IS357B
IS357A
IS357
IS355
IS354
IS34C02
IS3302-02XXXPFR
IS31SE5100-QFLS2-TR
IS31SE5100-QFLS2-EB
IS31SE5001-QFLS2-TR
IS31SE5001-QFLS2-EB
IS31SE5000-UTLS2-TR
IS31SE5000-UTLS2-EB
IS31LT3948-GRLS2-TR
IS31LT3948-GRLS2-EBAC
IS31LT3938-GRLS2-TR
IS31LT3918-GRLS2-TR
IS31LT3918-GRLS2-EBT8
IS31LT3910-GRLS2-EBT8
IS31LT3505-SLS2-TR
IS31LT3380-GRLS3-TR
IS31LT3380-GRLS3-EBMR16

IS41數(shù)據(jù)表相關(guān)新聞

IS42S16100H-6TL
IS42S16100H-6TL
2023-5-11
IS31AP2005-SLS2-TR
IS31AP2005-SLS2-TR
2022-12-16
IS32LT3957A-ZLA3-TR ISSI eTSSOP-16 21+ 30K
IS32LT3957A-ZLA3-TR ISSI eTSSOP-16 21+ 30K
2022-3-31
IS31FL3218-QFLS2-TR
IS31FL3218-QFLS2-TR
2021-10-11
IS42S16100E-7TL公司大量原裝正品現(xiàn)貨/長期供應(yīng)
瀚佳科技(深圳)有限公司專業(yè)為工廠一站式BOM配單服務(wù)
2019-5-8
IS42S16100C1-7T公司大量原裝正品現(xiàn)貨/長期供應(yīng)
瀚佳科技(深圳)有限公司專業(yè)為工廠一站式BOM配單服務(wù)
2019-5-8

DdatasheetPDF頁碼索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104

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IS41價格

IS41產(chǎn)品屬性

IS41芯片相關(guān)品牌

IS41規(guī)格書下載地址

IS41參數(shù)引腳圖相關(guān)

IS41數(shù)據(jù)表相關(guān)新聞

DdatasheetPDF頁碼索引

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