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IRG4BC20F價(jià)格
參考價(jià)格:¥7.4934
型號(hào):IRG4BC20FDPBF 品牌:International 備注:這里有IRG4BC20F多少錢(qián),2025年最近7天走勢(shì),今日出價(jià),今日競(jìng)價(jià),IRG4BC20F批發(fā)/采購(gòu)報(bào)價(jià),IRG4BC20F行情走勢(shì)銷(xiāo)售排行榜,IRG4BC20F報(bào)價(jià)。型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
---|---|---|---|---|
IRG4BC20F | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features ? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? Industry standard TO-220AB package Benefits ? Genera | IRF | ||
IRG4BC20F | Fit Rate / Equivalent Device Hours 文件:98.39 Kbytes Page:35 Pages | IRF | ||
IRG4BC20F | 封裝/外殼:TO-220-3 包裝:管件 描述:IGBT 600V 16A 60W TO220AB 分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 | Infineon 英飛凌 | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features ? Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery | IRF | |||
INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE
| IRF | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features ? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-pa | IRF | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features ? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-pa | IRF | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features ? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-pa | IRF | |||
INSULATED GATE BIPOLAR TRANSISTOR Features ? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? Industry standard TO-220AB package ? Lead-Free Benef | IRF | |||
Fit Rate / Equivalent Device Hours 文件:98.39 Kbytes Page:35 Pages | IRF | |||
OPTIMIZED FOR MEDIUM OPERATING 文件:319.01 Kbytes Page:11 Pages | IRF | |||
封裝/外殼:TO-220-3 包裝:管件 描述:IGBT 600V 16A 60W TO220AB 分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 | Infineon 英飛凌 | |||
OPTIMIZED FOR MEDIUM OPERATING 文件:319.01 Kbytes Page:11 Pages | IRF | |||
INSULATED GATE BIPOLAR TRANSISTOR 文件:204.95 Kbytes Page:9 Pages | IRF | |||
INSULATED GATE BIPOLAR TRANSISTOR 文件:204.95 Kbytes Page:9 Pages | IRF |
IRG4BC20F產(chǎn)品屬性
- 類(lèi)型
描述
- 型號(hào)
IRG4BC20F
- 功能描述
IGBT FAST 600V 16A TO-220AB
- RoHS
否
- 類(lèi)別
分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路
- 系列
-
- 標(biāo)準(zhǔn)包裝
30
- 系列
GenX3™ IGBT
- 類(lèi)型
PT 電壓 -
- 集電極發(fā)射極擊穿(最大)
1200V Vge,
- Ic時(shí)的最大Vce(開(kāi))
3V @ 15V,100A 電流 -
- 集電極(Ic)(最大)
200A 功率 -
- 最大
830W
- 輸入類(lèi)型
標(biāo)準(zhǔn)
- 安裝類(lèi)型
通孔
- 封裝/外殼
TO-247-3
- 供應(yīng)商設(shè)備封裝
PLUS247?-3
- 包裝
管件
IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
495 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
|||
IR |
24+ |
TO-220 |
80000 |
只做自己庫(kù)存 全新原裝進(jìn)口正品假一賠百 可開(kāi)13%增 |
|||
IR |
23+ |
TO-220 |
35890 |
||||
INFINEON/英飛凌 |
24+ |
TO-220 |
159942 |
明嘉萊只做原裝正品現(xiàn)貨 |
|||
IR |
1922+ |
TO-220 |
893 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
|||
INFINEON/英飛凌 |
25+ |
TO-220 |
32360 |
INFINEON/英飛凌全新特價(jià)IRG4BC20FDPBF即刻詢(xún)購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
|||
IR |
1950+ |
TO-220 |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
|||
IR |
2015+ |
SOP/DIP |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)! |
|||
IR |
05+ |
TO-220 |
495 |
||||
IR |
TO-220 |
68500 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
IRG4BC20F芯片相關(guān)品牌
IRG4BC20F規(guī)格書(shū)下載地址
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- IRFZ46Z
- IRFZ46S
- IRFZ46N
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- IRFZ46
- IRFZ45
- IRFZ44Z
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屬性 參數(shù)值 商品目錄 IGBT管 集電極電流(Ic)(最大值) 55A 集射極擊穿電壓(最大值) 600V 類(lèi)型 - 不同 Vge,Ic 時(shí)的 Vce(on) 2.3V @ 15V,27A 柵極閾值電壓-VGE(th) 6V @ 250uA
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元器件優(yōu)質(zhì)供應(yīng)
2019-11-1
DdatasheetPDF頁(yè)碼索引
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