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IRFZ46Z價(jià)格

參考價(jià)格：￥4.9044

型號(hào)：IRFZ46ZLPBF 品牌：IR 備注：這里有IRFZ46Z多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，IRFZ46Z批發(fā)/采購(gòu)報(bào)價(jià)，IRFZ46Z行情走勢(shì)銷售排行榜，IRFZ46Z報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
IRFZ46Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRFZ46Z

N-Channel MOSFET Transistor

文件：338.8 Kbytes Page：2 Pages

ISC

無錫固電

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET

Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

AUTOMOTIVE MOSFET

Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET

Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

ADVANCED PROCESS TECHNOLOGY

文件：381.21 Kbytes Page：12 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：381.21 Kbytes Page：12 Pages

IRF

Isc N-Channel MOSFET Transistor

文件：300.05 Kbytes Page：2 Pages

ISC

無錫固電

IRFZ46Z產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    IRFZ46Z

  • 功能描述

    MOSFET N-CH 55V 51A TO-220AB

  • RoHS

    否

  • 類別

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列

    HEXFET®

  • 標(biāo)準(zhǔn)包裝

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金屬氧化物 FET

  • 特點(diǎn)

    邏輯電平門

  • 漏極至源極電壓(Vdss)

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫歐 @ 9A，10V Id 時(shí)的

  • Vgs(th)（最大）

    4V @ 250µA 閘電荷(Qg) @

  • Vgs

    72nC @ 10V 輸入電容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安裝類型

    通孔

  • 封裝/外殼

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝

    TO-220FP

  • 包裝

    管件

更新時(shí)間：2025-9-10 23:01:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
IR
24+
NA/
179
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
IR
20+
TO-220
36900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
IR
03+
TO-262
985
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
IR
24+
TO-263
501435
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
IR
25+23+
TO-220
25450
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
IR
24+
D2-pak
44
只做原廠渠道 可追溯貨源
IR
24+
TO-220AB
8866
IR
23+
TO-220
35890
Infineon(英飛凌)
24+
D2PAK
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
IR/VISHAY
25+
TO-TO-220
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證

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