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-60V P -Channel Enhancement Mode MOSFET

Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-10 A RDS(ON)

采用 D-Pak 封裝的 -55V 單 P 通道 IR MOSFET

Ultra Low On-Resistance

文件：720.54 Kbytes Page：10 Pages

Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)

文件：108.01 Kbytes Page：10 Pages

Ultra Low On-Resistance

VDSS = -55V RDS(on) = 0.11? ID = -18A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

-60V P -Channel Enhancement Mode MOSFET

General Features VDS = -60V ID =-10 A RDS(ON)

-60V P -Channel Enhancement Mode MOSFET

Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-10 A RDS(ON)

ultra low on-resistance

文件：1.64904 Mbytes Page：10 Pages

ULTRA LOW ON RESISTANCE

文件：276.18 Kbytes Page：10 Pages

ULTRA LOW ON-RESISTANCE

文件：3.91037 Mbytes Page：10 Pages

ULTRA LOW ON RESISTANCE

文件：276.18 Kbytes Page：10 Pages

ULTRA LOW ON-RESISTANCE

文件：3.91037 Mbytes Page：10 Pages

MOSFET P-CH 55V 18A DPAK

P-Channel 60 V (D-S) MOSFET

文件：1.03929 Mbytes Page：8 Pages

Advanced process Technolgy

文件：276.18 Kbytes Page：10 Pages

High Current RF Chokes

Special Features ? Very high current capacity ? Low DCR ? Ferrite core ? VW-1 rated shrink tubing to cover winding ? Fixed lead spacing ? Operating temperature -55 to +105°C ? Current to cause 5 maximum inductance drop or 35°C maximum temperature rise

450 MHz to 6000Mhz TruPwr Detector

GENERAL DESCRIPTION The ADL5505 is a TruPwr? mean-responding (true rms) power detector for use in high frequency receiver and transmitter signal chains from 450 MHz to 6000 MHz. Requiring only a single supply between 2.5 V and 3.3 V, the detector draws less than 1.8 mA. The input is internally ac

450 MHz to 6000 MHz TruPwr Detector

FEATURES True rms response detector Excellent temperature stability ±0.25 dB rms detection accuracy vs. temperature Over 35 dB input power dynamic range, inclusive of crest factor RF bandwidths from 450 MHz to 6000 MHz 500 Ω input impedance Single-supply operation: 2.5 V to 3.3 V Low power

J5800-001 INSERTION TOOL PRODUCT SPECIFICATION

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High Current Chokes

文件：469.54 Kbytes Page：1 Pages