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IRF7811A價格

參考價格:¥1.3797

型號:IRF7811AVPBF 品牌:INTERNATIONAL 備注:這里有IRF7811A多少錢,2025年最近7天走勢,今日出價,今日競價,IRF7811A批發(fā)/采購報價,IRF7811A行情走勢銷售排行榜,IRF7811A報價。
型號 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
IRF7811A

Chipset for DC-DC Converters

Description These new devices employ advanced HEXFET? Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessor

IRF

IRF7811A

PROVISIONAL DATASHEET

Applications ? High Frequency Synchronous Buck Converters for Computer Processor Power ? High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ? 100 R G Tested Benefits ? Very Low RDS(on) at 4.5V VGS ? Ultra-Low Gate Impedance

IRF

HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom

IRF

PROVISIONAL DATASHEET

Applications ? High Frequency Synchronous Buck Converters for Computer Processor Power ? High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ? 100 R G Tested Benefits ? Very Low RDS(on) at 4.5V VGS ? Ultra-Low Gate Impedance

IRF

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th

IRF

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th

IRF

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th

IRF

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th

IRF

MOSFET N-CH 28V 11A 8-SOIC

Infineon

英飛凌

30V 單個 N 通道 HEXFET Power MOSFET, 采用 SO-8 封裝

Infineon

英飛凌

N-Channel Application-Specific MOSFETs

文件:116.7 Kbytes Page:6 Pages

IRF

N-Channel Application-Specific MOSFETs

文件:116.7 Kbytes Page:6 Pages

IRF

N-Channel Application-Specific MOSFETs

文件:116.7 Kbytes Page:6 Pages

IRF

30V 單個 N 通道 HEXFET Power MOSFET, 采用 SO-8 封裝

Infineon

英飛凌

Industry-standard pinout SO-8 Package

文件:188.45 Kbytes Page:6 Pages

IRF

Industry-standard pinout SO-8 Package

文件:188.45 Kbytes Page:6 Pages

IRF

N-Channel 20V (D-S) MOSFET

文件:1.05277 Mbytes Page:9 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel Application-Specific MOSFETs

文件:116.7 Kbytes Page:6 Pages

IRF

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 μs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亞德諾

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 μs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亞德諾

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 μs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亞德諾

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 μs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亞德諾

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

文件:211.68 Kbytes Page:19 Pages

AD

亞德諾

IRF7811A產(chǎn)品屬性

  • 類型

    描述

  • 型號

    IRF7811A

  • 功能描述

    MOSFET N-CH 28V 11.4A 8-SOIC

  • RoHS

  • 類別

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列

    HEXFET®

  • 標(biāo)準(zhǔn)包裝

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金屬氧化物 FET

  • 特點(diǎn)

    邏輯電平門

  • 漏極至源極電壓(Vdss)

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C

    18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫歐 @ 9A,10V Id 時的

  • Vgs(th)(最大)

    4V @ 250µA 閘電荷(Qg) @

  • Vgs

    72nC @ 10V 輸入電容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安裝類型

    通孔

  • 封裝/外殼

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝

    TO-220FP

  • 包裝

    管件

更新時間:2025-9-12 22:58:00
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IR
2016+
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IR
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原廠可訂貨,技術(shù)支持,直接渠道??珊灡9┖贤?/div>

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