国产精品久久久久无码av色戒,大帝av在线一区二区三区,国产肥熟女视频一区二区三区,大陆少妇xxxx做受,被黑人猛躁10次高潮视频

DirectFET Power MOSFET

Description The IRF6631 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout

采用 DirectFET SQ 封裝的 30V 單 N 通道 HEXFET 功率 MOSFET，額定電流為 57 安培。

Lead-Free (Qualified up to 260?C Reflow)

Description The IRF6631PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo

DirectFET

Power MOSFET

Description The IRF6631PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo

Lead-Free (Qualified up to 260?C Reflow)

Description The IRF6631PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo

Lead-Free (Qualified up to 260?C Reflow)

Description The IRF6631PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo

DirectFET

Power MOSFET

Description The IRF6631PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo

Low Switching and Conduction Losses

文件：253.72 Kbytes Page：10 Pages

Typically 10 關(guān)A Supply Current During Sleep Mode

Description ATA6629/ATA6631 is a fully integrated LIN transceiver, designed according to the LIN specification 2.0, 2.1 and SAEJ2602-2, with a low-drop voltage regulator (3.3V/5V/50 mA). The combination of voltage regulator and bus transceiver makes it possible to develop simple, but powerful, sl

1.2A High Output Current LDO Regulator

? GENERAL DESCRIPTION The AX6631 is a low noise, high output current, low quiescent current and low dropout linear regulator. The Device includes pass element, error amplifier, band-gap, current limit and thermal shutdown circuitry. The output current is up to 1.2A, the characteristics of low dro

1.2A High Output Current LDO Regulator

? GENERAL DESCRIPTION The AX6631 is a low noise, high output current, low quiescent current and low dropout linear regulator. The Device includes pass element, error amplifier, band-gap, current limit and thermal shutdown circuitry. The output current is up to 1.2A, the characteristics of low dro

6630B Series Single-Output, 80-100 W GPIB Power Supplies

文件：692.07 Kbytes Page：6 Pages

HELP3DC UMTS2100 (Band 1) LTE/WCDMA/CDMA/TD-SCDMA Linear PAM

文件：765.83 Kbytes Page：19 Pages