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IRF634價格
參考價格：￥3.3059
型號：IRF634PBF 品牌：Vishay 備注：這里有IRF634多少錢，2025年最近7天走勢，今日出價，今日競價，IRF634批發(fā)/采購報價，IRF634行情走勢銷售排行榜，IRF634報價。| 型號 | 功能描述 | 生產(chǎn)廠家 企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
IRF634 | Advanced Power MOSFET FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS= 250V ? Lower RDS(ON): 0.327?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 |   | |
IRF634 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VishayVishay Siliconix 威世科技 | | |
IRF634 | Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A) Description Third International Rectifier from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Fast Switching ? Ease of Paralleli | IRF | | |
IRF634 | N-channel mosfet transistor Features ? With TO-220 package ? Simple drive requirements ? Fast switching ? VDSS=250V; RDS(ON)≤0.45Ω ;ID=8.1A ? 1.gate 2.drain 3.source | ISC 無錫固電 | | |
IRF634 | N-Channel MOSFET Transistor DESCRIPTION ? Drain Current-ID=8.1A@ TC=25°C ? Drain SourceVoltage- : VDSS= 250V(Min) ? Static Drain-SourceOn-Resistance : RDS(OD = 0.45 Ω(Max) ? Fast Switching Speed ? Low Drive Requirement APPLICATIONS ? High current, high speedswitching ? Switch mode power supplies ? DC-DC conv | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | | |
IRF634 | N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET Description Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li | STMICROELECTRONICS 意法半導(dǎo)體 | | |
IRF634 | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | | |
IRF634 | N-channel 250V - 0.38廓 - 8A TO-220 /TO-220FP Mesh Overlay??Power MOSFET 文件：326.43 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | | |
IRF634 | MOSFET/場效應(yīng)管 | FOSHAN 藍(lán)箭電子 | | |
IRF634 | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
IRF634 | Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A) | Infineon 英飛凌 | | |
IRF634 | Power MOSFET 文件：157.84 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | |
Advanced Power MOSFET FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS= 250V ? Lower RDS(ON): 0.327?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | ||
250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | ||
250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | KERSEMI | | ||
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET Description Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF | | ||
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VishayVishay Siliconix 威世科技 | | ||
Available in Tape and Reel DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the h | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4. It p | IRF | | ||
Power MOSFET FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dv/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datashee | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dv/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datashee | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：157.84 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
isc N-Channel MOSFET Transistor 文件：281.1 Kbytes Page：2 Pages | ISC 無錫固電 | | ||
SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | | ||
Advanced Power MOSFET 文件：353.28 Kbytes Page：6 Pages | ARTSCHIP | | ||
POWER MOSFET 文件：135.5 Kbytes Page：6 Pages | SUNTAC | | ||
isc N-Channel MOSFET Transistor 文件：281.1 Kbytes Page：2 Pages | ISC 無錫固電 | | ||
N-channel 250V - 0.38廓 - 8A TO-220 /TO-220FP Mesh Overlay??Power MOSFET 文件：326.43 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
HEXFET? Power MOSFET 文件：3.55392 Mbytes Page：7 Pages | IRF | | ||
Power MOSFET 文件：157.84 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
封裝/外殼：TO-263-3，D2Pak（2 引線 + 接片），TO-263AB 包裝：卷帶（TR） 描述：MOSFET N-CHANNEL 250V 分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個 | VishayVishay Siliconix 威世科技 | | ||
T-1 Subminiature Lamps T-1? Subminiature Lamps | GILWAY | | ||
634M Series D-Sub Connectors | Machined Pins | High Density Three Contact Rows with 0.350 (8.89mm) Footprint Right Angle Bend | Receptacle Features High Density Three Contact Rows with .350(8.89mm) Footprint Right Angle Bend with Machined Contacts .090(2.29mm) Contact Spacing 0.078(1.98mm) Row Spacing Plug and Receptacle in 15, 26, 44 or 62 Contact Sizes Pin and Socket Contact Mating Design with P.C. Tail Termination M | EDAC 亞得電子 | | ||
634 Series D-Sub Connectors | High Density Three Contact Rows with .350(8.89mm) Footprint RightAngle Bend | Receptacle Features High Density Three Contact Rows with .350(8.89mm) Footprint Right Angle Bend Standard Contact Spacing and Row Spacing Optional 9th pin recessed on 15 Contact Size in accordance with VESA Display Data Channel Standard Plug and Receptacle in 15, 26, 44, 62 or 78 Contact Sizes | EDAC 亞得電子 | | ||
Low Frequencies 文件：141.01 Kbytes Page：2 Pages | OSCILENT | | ||
DC axial fans 文件：249.79 Kbytes Page：1 Pages | EBMPAPST 依必安派特 | |
IRF634產(chǎn)品屬性
- 類型
描述
- 型號
IRF634
- 功能描述
MOSFET N-Chan 250V 8.0 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶體管極性
N-Channel
- 汲極/源極擊穿電壓
650 V
- 閘/源擊穿電壓
25 V
- 漏極連續(xù)電流
130 A 電阻汲極/源極
- RDS（導(dǎo)通）
0.014 Ohms
- 配置
Single
- 安裝風(fēng)格
Through Hole
- 封裝/箱體
Max247
- 封裝
Tube
| IC供應(yīng)商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
5050 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
|||
FAIRCHILD |
2016+ |
TO-220 |
3500 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
|||
SILICONIX |
2023+ |
SMD |
46674 |
安羅世紀(jì)電子只做原裝正品貨 |
|||
SEC/上優(yōu) |
25+ |
TO220 |
54648 |
百分百原裝現(xiàn)貨 實單必成 歡迎詢價 |
|||
IR/VISHAY |
22+ |
SOT263 |
100000 |
代理渠道/只做原裝/可含稅 |
|||
vishay |
24+ |
500000 |
行業(yè)低價,代理渠道 |
||||
IR |
24+ |
TO-220 |
3800 |
大批量供應(yīng)優(yōu)勢庫存熱賣 |
|||
ST |
24+ |
TO-220 |
20000 |
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅?。?/div> |
|||
FAIRCHILD/仙童 |
24+ |
TO 220 |
155409 |
明嘉萊只做原裝正品現(xiàn)貨 |
|||
INFINEON/英飛凌 |
25+ |
TO-220 |
32360 |
INFINEON/英飛凌全新特價IRF634PBF即刻詢購立享優(yōu)惠#長期有貨 |
IRF634芯片相關(guān)品牌
IRF634規(guī)格書下載地址
IRF634參數(shù)引腳圖相關(guān)
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- IRF6216TRPBF-CUTTAPE
- IRF6216TRPBF
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DdatasheetPDF頁碼索引
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