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IRF540價(jià)格

參考價(jià)格：￥6.2668

型號(hào)：IRF540 品牌：Vishay 備注：這里有IRF540多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，IRF540批發(fā)/采購(gòu)報(bào)價(jià)，IRF540行情走勢(shì)銷售排行榜，IRF540報(bào)價(jià)。

型號(hào)	功能描述	生產(chǎn)廠家&企業(yè)	LOGO
IRF540	N-CHANNEL100V-00.50ohm-30A-TO-220/TO-220FIPOWERMOSFET N-CHANNEL100V-00.50?-30A-TO-220/TO-220FIPOWERMOSFET ■TYPICALRDS(on)=0.050? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZA	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)
IRF540	N-channelTrenchMOStransistor VDSS=100V ID=23A RDS(ON)≤77m? GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Lowthermalresistance Applications:- ?d.c.t	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
IRF540	N-ChannelPowerMOSFETs,27A,60-100V	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司
IRF540	HEXFETPOWERMOSFET ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. 1.Dynamicdv/dtRating 2.RepetitiveAvalancheRated 3.175°COperatingTemperature	IRF International Rectifier
IRF540	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體
IRF540	N-ChannelPowerMOSFET ID(A)28 VDSS(V)100 RDS(ON)(Ω)0.077@VGS=10V QG(nC)max.72 DESCRIPTION TheNellIRF540areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofop	NELLSEMINell Semiconductor Co., Ltd 尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司
IRF540	N-ChannelPowerMOSFETs,27A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司
IRF540	PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation	KERSEMI Kersemi Electronic Co., Ltd.
IRF540	25Aand28A,80Vand100V,0.077and0.100Ohm,N-ChannelPowerMOSFETs Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司
IRF540	iscN-ChannelMosfetTransistor DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ·FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司
IRF540	N-ChannelPowerMOSFET(100V/27A) GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack	FS First Silicon Co., Ltd
IRF540	N-ChannelMOSFETusesadvancedtrenchtechnology Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=100V,ID=30A,RDS(ON)≤70m?@VGS=10V 2)Lowgatecharge. 3)Greendeviceavailable. 4)Advancedhig	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司
IRF540	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體
IRF540	TO-220-3LPlastic-EncapsulateMOSFETS FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?175°COperatingTemperature ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?Lead(Pb)-freeAvailable	DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司
IRF540	N-ChannelPowerMOSFET DESCRIPTION ·DrainCurrent–ID=28A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=77mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedespeciallyforhi	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司
IRF540	N-CHANNEL100V-0.055W-22ATO-220LOWGATECHARGESTripFET?IIPOWERMOSFET DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronics uniqueSTripFETprocesshasspecificallybeendesigned tominimizeinputcapacitanceandgatecharge.Itis thereforesuitableasprimaryswitchinadvancedhighefficiency, high-frequencyisolatedDC-DCconvertersfor Telecoman	SYC SYC Electronica
IRF540	SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商
IRF540	PowerMOSFET 文件：282.81 Kbytes Page：9 Pages	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體
IRF540	N-CHANNEL100V-0.055廓-22ATO-220LOWGATECHARGESTripFET??IIPOWERMOSFET 文件：311.12 Kbytes Page：8 Pages	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)
IRF540_V01	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體
IRF540A	AdvancedPowerMOSFET Features ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175OperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司
IRF540D	N-ChannelPowerMOSFET(100V/27A) GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack	FS First Silicon Co., Ltd
IRF540F	N-ChannelPowerMOSFET(100V/27A) GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack	FS First Silicon Co., Ltd
IRF540FI	iscN-ChannelMosfetTransistor DESCRITION Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司
IRF540FI	N-CHANNEL100V-00.50ohm-30A-TO-220/TO-220FIPOWERMOSFET N-CHANNEL100V-00.50?-30A-TO-220/TO-220FIPOWERMOSFET ■TYPICALRDS(on)=0.050? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZA	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)
IRF540I	N-ChannelPowerMOSFET(100V/27A) GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack	FS First Silicon Co., Ltd
IRF540N	AdvancedProcessTechnology VDSS=100V RDS(on)=44m? ID=33A Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethrougho	KERSEMI Kersemi Electronic Co., Ltd.
IRF540N	N-ChannelMosfetTransistor ?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.044? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperat	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司
IRF540N	33A,100V,0.040Ohm,N-ChannelPowerMOSFET Features 1.UltraLowOn-Resistance -rDS(ON)=0.040?,VGS=10V 2.SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels 3.PeakCurrentvsPulseWidthCurve 4.UISRatingCurve	Intersil Intersil Corporation
IRF540N	PowerMOSFET(Vdss=100V,Rds(on)=44mohm,Id=33A) Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr	IRF International Rectifier
IRF540N	33A,100V,0.040Ohm,N-Channel,PowerMOSFET Features ?UltraLowOn-Resistance -rDS(ON)=0.040Ω,VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER ElectricalModels -SpiceandSABER ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司
IRF540NL	IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-262package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司
IRF540NL	PowerMOSFET(Vdss=100V,Rds(on)=44mohm,Id=33A) AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthede	IRF International Rectifier
IRF540NL	UltraLowOn-Resistance Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter	KERSEMI Kersemi Electronic Co., Ltd.
IRF540NLPBF	HEXFET?PowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p	IRF International Rectifier
IRF540NPBF	HEXFETPowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr	IRF International Rectifier
IRF540NPBF	N-Channel100-V(D-S)MOSFET FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司
IRF540NS	N-ChannelMOSFET ■Features ●VDS(V)=100V ●ID=33A(VGS=10V) ●RDS(ON)	KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司
IRF540NS	PowerMOSFET(Vdss=100V,Rds(on)=44mohm,Id=33A) AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthede	IRF International Rectifier
IRF540NS	UltraLowOn-Resistance Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter	KERSEMI Kersemi Electronic Co., Ltd.
IRF540NS	IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司
IRF540NSPBF	HEXFET?PowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p	IRF International Rectifier
IRF540NSTRPBF	N-Channel100-V(D-S)MOSFET FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司
IRF540PBF	PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation	KERSEMI Kersemi Electronic Co., Ltd.
IRF540PBF	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體
IRF540PBF	HEXFET?PowerMOSFET Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissi	IRF International Rectifier
IRF540S	N-channelTrenchMOStransistor VDSS=100V ID=23A RDS(ON)≤77m? GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Lowthermalresistance Applications:- ?d.c.t	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
IRF540S	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體
IRF540S	N-Channel100-V(D-S)MOSFET FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司
IRF540S	PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatas	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體
IRF540S	N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=28A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=77mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·AutomaticTestEquipment ·High-SideSwitching	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司
IRF540S_V01	PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatas	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體
IRF540SPBF	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體
IRF540SPBF	HEXFET?PowerMOSFET DESCRIPTION ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovid	IRF International Rectifier
IRF540STRLPBF	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體
IRF540STRRPBF	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體
IRF540Z	AUTOMOTIVEMOSFET VDSS=100V RDS(on)=26.5m? ID=36A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingte	IRF International Rectifier
IRF540Z	N-ChannelMOSFETTransistor ?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.0265? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableopera	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司
IRF540ZL	AUTOMOTIVEMOSFET VDSS=100V RDS(on)=26.5m? ID=36A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingte	IRF International Rectifier
IRF540ZL	IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF540產(chǎn)品屬性

類型
描述
型號(hào)
IRF540
功能描述
MOSFET N-Chan 100V 28 Amp
RoHS
否
制造商
STMicroelectronics
晶體管極性
N-Channel
汲極/源極擊穿電壓
650 V
閘/源擊穿電壓
25 V
漏極連續(xù)電流
130 A 電阻汲極/源極
RDS（導(dǎo)通）
0.014 Ohms
配置
Single
安裝風(fēng)格
Through Hole
封裝/箱體
Max247
封裝
Tube

IRF540供應(yīng)商更多...

更新時(shí)間：2025-7-19 9:42:00

IC供應(yīng)商	芯片型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市金華微盛電子有限公司	IRF540Z	IR	19+	TO-220	56335		詢價(jià)
深圳市英博爾電子有限公司	IRF540NPBF	INFINEON	23+	TO-220	10000	全新、原裝	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	IRF540	VISHAY	23+	TO-220	3200	絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!	詢價(jià)
上海專毅電子科技有限公司	IRF540	IR	17+	TO220	9888	只做原裝,現(xiàn)貨庫(kù)存	詢價(jià)
深圳市華睿芯科技有限公司	IRF540	IR	24+	TO220-3	20000	全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！	詢價(jià)
深圳市星宇佳科技有限公司	IRF540	XY/星宇佳	21+	TO-220	19851	自主品牌量大可定	詢價(jià)
深圳市宏世佳電子科技有限公司	IRF540PBF	IR	23+	TO-220	3500	全新原裝,公司現(xiàn)貨銷售	詢價(jià)
深圳市賽爾通科技有限公司	IRF540	ST	23+	TO-220	65480		詢價(jià)
深圳市納艾斯科技有限公司	IRF540	PHI	24+	TO-220	80000	只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增	詢價(jià)
深圳市星佑電子有限公司	IRF540	IR	05+	原廠原裝	1751	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)

IRF540芯片相關(guān)品牌

IRF540規(guī)格書(shū)下載地址

IRF540參數(shù)引腳圖相關(guān)

ku波段
kt250
kse13005
ks20
km710
ka5q1265rf
k9f1208
k310
k2698
k233
k2055
k2010
jumper
jtag接口
jk觸發(fā)器
j111
j108
isd1420
irf630
IRF5810
IRF5806
IRF5805
IRF5804
IRF5803
IRF5802TRPBF
IRF5802
IRF5801TRPBF
IRF5801
IRF5800TR
IRF5800
IRF550A
IRF550
IRF543
IRF542
IRF541
IRF540ZSTRLPBF
IRF540ZSPBF
IRF540ZPBF
IRF540ZLPBF
IRF540Z
IRF540STRRPBF
IRF540STRLPBF
IRF540SPBF
IRF540S
IRF540PBF
IRF540NSTRRPBF-CUTTAPE
IRF540NSTRRPBF
IRF540NSTRLPBF-CUTTAPE
IRF540NSTRLPBF/BKN
IRF540NSTRLPBF
IRF540NSPBF
IRF540NPBF
IRF540NLPBF
irf540n
IRF540I
IRF540F
IRF540D
IRF540A
IRF533R
IRF533
IRF532R
IRF532
IRF531R
IRF531
IRF530STRRPBF
IRF530STRLPBF
IRF530SPBF
IRF530S
IRF530R
IRF530PBF
IRF530NSTRRPBF
IRF530NSTRLPBF
IRF530NSPBF
IRF530NPBF
IRF530N
IRF530L
IRF530A
IRF5305STRRPBF
IRF5305STRLPBF-CUTTAPE
IRF5305STRLPBF
IRF5305SPBF
IRF5305PBF
IRF5305LPBF
IRF5305
IRF530
IRF523
IRF522
IRF5210STRRPBF-CUTTAPE
IRF5210STRRPBF
IRF5210STRLPBF
IRF5210SPBF
IRF5210
IRF521
IRF520V
IRF520S
IRF520N

IRF540數(shù)據(jù)表相關(guān)新聞

IRF540NPBF
全新原裝現(xiàn)貨支持第三方機(jī)構(gòu)驗(yàn)證
2022-10-19
IRF5305PBF
原裝進(jìn)口代理
2022-10-19
IRF540NPBF
www.jskj-ic.com
2021-9-10
IRF5305SPBF
www.jskj-ic.com
2021-8-23
IRF540N
IRF540N，當(dāng)天發(fā)貨0755-82732291全新原裝現(xiàn)貨或門市自取.
2020-10-29
IRF521，IRF523，IRF511，IRF512，IRF512S2532，IRF540，IRF540P2，IRF540RP2，IRF541，IRF542，IRF543，IRF531，IRF532，IRF640，IRF640R，IRF640S2470
IRF521，IRF523，IRF511，IRF512，IRF512S2532，IRF540，IRF540P2，IRF540RP2，IRF541，IRF542，IRF543，IRF531，IRF532，IRF640，IRF640R，IRF640S2470
2019-12-17

DdatasheetPDF頁(yè)碼索引

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