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IR2110價(jià)格

參考價(jià)格：￥646.4218

型號(hào)：IR2110L4 品牌：INTERNATIONAL RECTIFIER 備注：這里有IR2110多少錢(qián)，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，IR2110批發(fā)/采購(gòu)報(bào)價(jià)，IR2110行情走勢(shì)銷(xiāo)售排行榜，IR2110報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
IR2110

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

IR2110

IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF

Features ? Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune ? Gate drive supply range from 10 to 20V ? Undervoltage lockout for both channels ? 3.3V logic compatible Separate logic supply range from 3.

SYC

IR2110

封裝/外殼：14-DIP（0.300"，7.62mm） 包裝：散裝 描述：IC GATE DRVR HALF-BRIDGE 14DIP 集成電路（IC） 柵極驅(qū)動(dòng)器

Infineon

英飛凌

IR2110

500 V high-side and low-side gate driver IC with shutdown

Infineon

英飛凌

IR2110

HIGH AND LOW SIDE DRIVER

文件：334.13 Kbytes Page：18 Pages

IRF

IR2110

HIGH AND LOW SIDE DRIVER

文件：491.79 Kbytes Page：17 Pages

Infineon

英飛凌

IR2110

HIGH VOLTAGE MOS GATE DRIVER

文件：9.50242 Mbytes Page：24 Pages

IRF

IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

HIGH VOLTAGE MOS GATE DRIVER

文件：9.50242 Mbytes Page：24 Pages

IRF

HIGH AND LOW SIDE DRIVER

文件：334.13 Kbytes Page：18 Pages

IRF

封裝/外殼：14-DIP（0.300"，7.62mm），13 引線(xiàn) 包裝：管件 描述：IC GATE DRVR HALF-BRIDGE 14DIP 集成電路（IC） 柵極驅(qū)動(dòng)器

Infineon

英飛凌

HIGH AND LOW SIDE DRIVER

文件：206.91 Kbytes Page：14 Pages

IRF

HIGH AND LOW SIDE DRIVER

文件：127.77 Kbytes Page：14 Pages

IRF

HIGH AND LOW SIDE DRIVER

文件：206.91 Kbytes Page：14 Pages

IRF

High-side And Low-side Driver

Infineon

英飛凌

高可靠性功率 IC

Infineon

英飛凌

HIGH AND LOW SIDE DRIVER

文件：143.13 Kbytes Page：14 Pages

IRF

HIGH AND LOW SIDE DRIVER

文件：139.07 Kbytes Page：14 Pages

IRF

HIGH AND LOW SIDE DRIVER

文件：253.12 Kbytes Page：14 Pages

IRF

HIGH AND LOW SIDE DRIVER

文件：253.12 Kbytes Page：14 Pages

IRF

HIGH AND LOW SIDE DRIVER

文件：253.12 Kbytes Page：14 Pages

IRF

HIGH AND LOW SIDE DRIVER

文件：491.79 Kbytes Page：17 Pages

Infineon

英飛凌

Snap Bushings

文件：133.28 Kbytes Page：1 Pages

HeycoHeyco.

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5?-Digit Dual-Display Digital Multimeter

文件：864.59 Kbytes Page：4 Pages

TEKTRONIXTektronix

泰克泰克科技(中國(guó))有限公司

Non-Relampable Neon-Incandescent Indicator Lights

文件：65.2 Kbytes Page：1 Pages

VCC

Visual Communications Company

Fieldbus, 2 Pr #16 Str TC, XLPO Ins, IS/OS, TPE Jkt, CMG

文件：256.45 Kbytes Page：3 Pages

BELDEN

百通

Neon-Incandescent Indicator Lights

文件：228.35 Kbytes Page：1 Pages

CML

IR2110產(chǎn)品屬性

  • 類(lèi)型

    描述

  • 型號(hào)

    IR2110

  • 功能描述

    IC DRIVER HIGH/LOW SIDE 14-DIP

  • RoHS

    否

  • 類(lèi)別

    集成電路(IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān)

  • 系列

    -

  • 標(biāo)準(zhǔn)包裝

    50

  • 系列

    -

  • 配置

    高端

  • 輸入類(lèi)型

    非反相

  • 延遲時(shí)間

    200ns 電流 -

  • 峰

    250mA

  • 配置數(shù)

    1

  • 輸出數(shù)

    1 高端電壓 -

  • 最大（自引導(dǎo)啟動(dòng)）

    600V

  • 電源電壓

    12 V ~ 20 V

  • 工作溫度

    -40°C ~ 125°C

  • 安裝類(lèi)型

    通孔

  • 封裝/外殼

    8-DIP（0.300，7.62mm）

  • 供應(yīng)商設(shè)備封裝

    8-DIP

  • 包裝

    管件

  • 其它名稱(chēng)

    *IR2127

更新時(shí)間：2025-9-18 23:01:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
IR(國(guó)際整流器)
24+
NA/
8735
原廠直銷(xiāo),現(xiàn)貨供應(yīng),賬期支持!
Infineon(英飛凌)
24+
標(biāo)準(zhǔn)封裝
9223
原廠渠道供應(yīng),大量現(xiàn)貨,原型號(hào)開(kāi)票。
IR
2016+
DIP
3000
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
STM
23+
TO-252
12000
全新原裝假一賠十
IOR
24+
DIP
80000
只做自己庫(kù)存 全新原裝進(jìn)口正品假一賠百 可開(kāi)13%增
IRF
三年內(nèi)
1983
只做原裝正品
INFINEON/英飛凌
22+
TO-220
100000
代理渠道/只做原裝/可含稅
IR
25+
DIP
54648
百分百原裝現(xiàn)貨 實(shí)單必成 歡迎詢(xún)價(jià)
IR
24+/25+
490
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
INFINEON/英飛凌
25+
SOP-16
32000
INFINEON/英飛凌全新特價(jià)IR2110STRPBF即刻詢(xún)購(gòu)立享優(yōu)惠#長(zhǎng)期有貨

IR2110芯片相關(guān)品牌

IR2110規(guī)格書(shū)下載地址

IR2110參數(shù)引腳圖相關(guān)

IR2110數(shù)據(jù)表相關(guān)新聞

  • IR2110STRPBF

    IR2110STRPBF

    2023-4-14

  • IR2104STRPBF

    IR2104STRPBF

    2021-8-9

  • IR2104STRPBF 原裝代理現(xiàn)貨 可追溯原廠含稅出

    IR2104STRPBF 原裝代理現(xiàn)貨 可追溯原廠含稅出

    2020-11-9

  • IR2110

    IR2110，全新原裝當(dāng)天發(fā)貨或門(mén)市自取0755-82732291.

    2019-8-25

  • IR2111

    IR2111，全新原裝當(dāng)天發(fā)貨或門(mén)市自取0755-82732291.

    2019-8-21

  • IR2103-半橋驅(qū)動(dòng)器

    說(shuō)明 在IR2103（S）的高電壓，高速動(dòng)力供養(yǎng)高，MOSFET和IGBT驅(qū)動(dòng)器低側(cè)參考輸出通道。專(zhuān)有的HVIC免疫和閂鎖的CMOS技術(shù)使堅(jiān)固耐用單片建設(shè)。邏輯輸入兼容標(biāo)準(zhǔn)CMOS或LSTTL輸出，下降到3.3V邏輯。輸出驅(qū)動(dòng)器具有高脈沖電流緩沖級(jí)，設(shè)計(jì)為最小驅(qū)動(dòng)器跨導(dǎo)。浮動(dòng)通道可以用來(lái)驅(qū)動(dòng)一個(gè)N溝道功率MOSFET在高端配置的可在高達(dá)600伏或IGBT。 特點(diǎn) •浮動(dòng)通道設(shè)計(jì)為引導(dǎo)操作+600 V全面運(yùn)作耐瞬態(tài)電壓負(fù)dV / dt的免疫 •門(mén)極驅(qū)動(dòng)電壓范圍從10至20V •欠壓鎖定

    2013-2-9

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