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IPD60R750E6價格

參考價格：￥3.3081

型號：IPD60R750E6 品牌：Infineon 備注：這里有IPD60R750E6多少錢，2025年最近7天走勢，今日出價，今日競價，IPD60R750E6批發(fā)/采購報價，IPD60R750E6行情走勢銷售排行榜，IPD60R750E6報價。
型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
IPD60R750E6

600V CoolMOS E6 Power Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to

Infineon

英飛凌

IPD60R750E6

N-Channel MOSFET Transistor

? DESCRITION ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on)≤0.75? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

無錫固電

IPD60R750E6

Metal Oxide Semiconductor Field Effect Transistor

文件：1.1844 Mbytes Page：17 Pages

Infineon

英飛凌

N-Channel MOSFET Transistor

? DESCRITION ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on)≤0.75? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

無錫固電

N-Channel MOSFET Transistor

? DESCRIPTION ? Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.75? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust de

ISC

無錫固電

600V CoolMOS E6 Power Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to

Infineon

英飛凌

Isc N-Channel MOSFET Transistor

? FEATURES ? With TO-220F Package ? Drain Source Voltage- : VDSS=600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.75Ω (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applicati

ISC

無錫固電

Metal Oxide Semiconductor Field Effect Transistor

文件：1.1844 Mbytes Page：17 Pages

Infineon

英飛凌

IPD60R750E6產(chǎn)品屬性

  • 類型

    描述

  • 型號

    IPD60R750E6

  • 功能描述

    MOSFET N-CH 650V 5.7A

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶體管極性

    N-Channel

  • 汲極/源極擊穿電壓

    650 V

  • 閘/源擊穿電壓

    25 V

  • 漏極連續(xù)電流

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）

    0.014 Ohms

  • 配置

    Single

  • 安裝風格

    Through Hole

  • 封裝/箱體

    Max247

  • 封裝

    Tube

更新時間：2025-8-19 13:36:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
INFINEON
24+
TO-252
8500
原廠原包原裝公司現(xiàn)貨,假一賠十,低價出售
INFINE0N
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
Infineon Technologies
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原廠渠道,現(xiàn)貨配單
INFINEON/英飛凌
24+
DPAK(TO-252)
60000
全新原裝現(xiàn)貨
Infineon/英飛凌
20+
TO-252
16300
終端可免費提供樣品,歡迎咨詢
INFINEON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
INFINEON
14+
TO-252
27500
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
INFINEON
20+
TO-252
19570
原裝優(yōu)勢主營型號-可開原型號增稅票
INFINEON/英飛凌
22+
TO-252
12245
現(xiàn)貨,原廠原裝假一罰十!
INFINEON/英飛凌
14+
TO-252
2329
原裝現(xiàn)貨

IPD60R750E6芯片相關(guān)品牌

IPD60R750E6規(guī)格書下載地址

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