国产精品久久久久无码av色戒,大帝av在线一区二区三区,国产肥熟女视频一区二区三区,大陆少妇xxxx做受,被黑人猛躁10次高潮视频

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) for target application ? Halogen-free according to IEC61249-2-21 ? Id

OptiMOSTM3 Power-Transistor

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) for target application ? Halogen-free according to IEC61249-2-21 ? Id

Isc N-Channel MOSFET Transistor

? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

OptiMOS3 Power-Transistor

文件：737.83 Kbytes Page：11 Pages

OptiMOS3 Power-Transistor

文件：737.83 Kbytes Page：11 Pages

OptiMOS3 Power-Transistor

文件：737.83 Kbytes Page：11 Pages

N-Channel MOSFET Transistor

? DESCRITION ? High frequency switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤60m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation