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型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
IC41LV16105S

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ICSI

1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

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1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

ISSI

北京矽成

IC41LV16105S產(chǎn)品屬性

  • 類型

    描述

  • 型號

    IC41LV16105S

  • 制造商

    ICSI

  • 制造商全稱

    Integrated Circuit Solution Inc

  • 功能描述

    1M x 16(16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

更新時間：2025-9-8 20:00:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
ICSI
25+
SOJ
996880
只做原裝,歡迎來電資詢
ICSI
24+
SOJ40
20000
全新原廠原裝，進口正品現(xiàn)貨，正規(guī)渠道可含稅！！
ICSI
20+
SOJ
35830
原裝優(yōu)勢主營型號-可開原型號增稅票
ICSI
21+
SOJ32
1321
只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨!
ICSI
2450+
SSOP44
6540
只做原廠原裝正品現(xiàn)貨或訂貨!終端工廠可以申請樣品!
INTEGRATEDS
23+
原廠封裝
9888
專做原裝正品,假一罰百!
ICSI
2020+
SOJ-40
1743
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
ICSI
25+
SOJ
13800
原裝,請咨詢
ICSI
18+
TSOP
85600
保證進口原裝可開17%增值稅發(fā)票
ICSI
25+23+
SOJ
34545
絕對原裝正品全新進口深圳現(xiàn)貨

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IC41LV16105S規(guī)格書下載地址

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    2019-11-19

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    概述 MIC5205是一種高效的線性穩(wěn)壓器超低噪聲輸出，非常低壓差（通常在17mV輕載和165mV在150mA），和非常低的地面電流（100mA輸出600μA）。 MIC5205提供了更好的超過1％的初始精度。特別是手持，電池供電設(shè)備設(shè)計，該MIC5205包括一個CMOS或TTL兼容啟用/關(guān)斷控制輸入。關(guān)機時，功耗下降至接近零。穩(wěn)壓器接地電流增大只是稍微在輟學(xué)，進一步延長電池壽命。MIC5205的主要功能包括一個基準(zhǔn)旁路腳提高其已經(jīng)出色的低噪聲性能，反相電池保護，電流限制，并過熱關(guān)機。該MIC5205可在固定和可調(diào)輸出在一個小型SOT- 23 -5封裝電壓版本。對于低壓差穩(wěn)

    2013-1-27

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