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型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
HY57V641620ET

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f

Hynix

海力士

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f

Hynix

海力士

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f

Hynix

海力士

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f

Hynix

海力士

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f

Hynix

海力士

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f

Hynix

海力士

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f

Hynix

海力士

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere

Hynix

海力士

HY57V641620ET產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    HY57V641620ET

  • 制造商

    HYNIX

  • 制造商全稱

    Hynix Semiconductor

  • 功能描述

    64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

更新時(shí)間:2025-9-19 20:43:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
HY
06+
TSOP54
3215
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
HYNIX/海力士
22+
TSOP54
100000
代理渠道/只做原裝/可含稅
NANYA/南亞
24+
NA/
3604
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
HYNIX
25+
TSOP
54648
百分百原裝現(xiàn)貨 實(shí)單必成 歡迎詢價(jià)
HY
25+
標(biāo)準(zhǔn)封裝
18000
原廠直接發(fā)貨進(jìn)口原裝
HYDAI
24+
TSOP
5645
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
HY
24+
TSOP
20000
全新原廠原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅??!
HYNIX
25+
TSOP54
32360
HYNIX全新特價(jià)HY57V641620ETP-H-C即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
HYNIX
18+
TSOP
30019
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票
HYNIX
08+
TSOP54
300
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