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型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
HY57V561620BT-SI

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4Banks x 4M x 16Bit Synchronous DRAM

The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620BT-SI產(chǎn)品屬性

  • 類型

    描述

  • 型號

    HY57V561620BT-SI

  • 制造商

    HYNIX

  • 制造商全稱

    Hynix Semiconductor

  • 功能描述

    4 Banks x 4M x 16Bit Synchronous DRAM

更新時間：2025-8-17 23:01:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
HY
24+
NA/
3304
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
HY
25+
SOP
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
HYUNDAI
24+
TSOP
8
HY
24+
SMD
20000
一級代理原裝現(xiàn)貨假一罰十
HYNIX
6200
TSOP
17
100%原裝正品現(xiàn)貨
TSOP54
25+
HY
12588
原裝正品,自己庫存 假一罰十
hy
23+
tssop
5000
原裝正品,假一罰十
HUNIX
18+
SSOP
85600
保證進口原裝可開17%增值稅發(fā)票
N/A
23+
80000
專注配單,只做原裝進口現(xiàn)貨
HY
2447
TSOP
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨

HY57V561620BT-SI芯片相關(guān)品牌

HY57V561620BT-SI規(guī)格書下載地址

HY57V561620BT-SI參數(shù)引腳圖相關(guān)

HY57V561620BT-SI數(shù)據(jù)表相關(guān)新聞

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