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型號 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
HUF75309D3

19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HUF75309D3

19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Intersil

HUF75309D3

19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs

RENESAS

瑞薩

HUF75309D3

19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs

ONSEMI

安森美半導(dǎo)體

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 60V, ID= 50A RDS(ON)

Bychip

百域芯

19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Intersil

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 60V, ID= 50A RDS(ON)

Bychip

百域芯

HUF75309D3產(chǎn)品屬性

  • 類型

    描述

  • 型號

    HUF75309D3

  • 功能描述

    MOSFET DISC BY MFG 2/02

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶體管極性

    N-Channel

  • 汲極/源極擊穿電壓

    650 V

  • 閘/源擊穿電壓

    25 V

  • 漏極連續(xù)電流

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）

    0.014 Ohms

  • 配置

    Single

  • 安裝風(fēng)格

    Through Hole

  • 封裝/箱體

    Max247

  • 封裝

    Tube

更新時間：2025-9-15 23:01:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
INTERSIL
24+
NA/
5275
原裝現(xiàn)貨,當天可交貨,原型號開票
INTERSIL
22+
TO-252
100000
代理渠道/只做原裝/可含稅
INTERSIL
07+
TO-251
2025
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
FSC/ON
23+
原包裝原封 □□
597
原裝進口特價供應(yīng) 特價，原裝元器件供應(yīng)，支持開發(fā)樣品 更多詳細咨詢 庫存
FAIRCHILD/仙童
23+
SOT252
6000
原裝正品，支持實單
FAIRCHILD/仙童
03+
TO-252
21567
FAIRCHILD
23+
TO-252
9526
ON/安森美
24+
TO-252
505348
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
FAIRCHILD/仙童
23+
TO-252
30000
全新原裝現(xiàn)貨,價格優(yōu)勢
FAIRC
12+
TO-251(IPAK)
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。

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HUF75309D3規(guī)格書下載地址

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