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Two-wire serial interface 2k / 4k / 8k / 16k / 32k / 64k EEPROM

Description HN58X24xx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They

Two-wire serial interface 2k / 4k / 8k / 16k / 32k / 64k EEPROM(8-kword x 8-bit)

HN58X24xx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also hav

Two-wire serial interface 2k / 4k / 8k / 16k / 32k / 64k EEPROM(8-kword x 8-bit)

HN58X24xx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also hav

Two-wire serial interface 2k / 4k / 8k / 16k / 32k / 64k EEPROM

Description HN58X24xx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They

Two-wire serial interface (2k EEPROM 256-word x 8-bit) 4k EEPROM (512-word x 8-bit)

Description HN58X24xxSI series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They

Two-wire serial interface 2k EEPROM (256-word ? 8-bit) 4k EEPROM (512-word ? 8-bit)

Description HN58X24xxSFPIAG series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology