位置：首頁 > IC中文資料第5633頁 > GAL22V10D-10
| 型號 | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 |   | ||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 萊迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 萊迪思 | | ||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 萊迪思 | | ||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 萊迪思 | | ||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 萊迪思 | | ||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 萊迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 萊迪思 | | ||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 萊迪思 | | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 萊迪思 | | ||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 萊迪思 | | ||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 萊迪思 | | ||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 萊迪思 | | ||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 萊迪思 | | ||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
封裝/外殼：28-LCC（J 形引線） 包裝：散裝 描述：IC CPLD 10MC 10NS 28PLCC 集成電路（IC） CPLD（復(fù)雜可編程邏輯器件） | ETC 知名廠家 | ETC | | |
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
封裝/外殼：28-LCC（J 形引線） 包裝：管件 描述：IC CPLD 10MC 10NS 28PLCC 集成電路（IC） CPLD（復(fù)雜可編程邏輯器件） | ETC 知名廠家 | ETC | | |
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | | ||
All Devices Discontinued 文件：718.73 Kbytes Page：23 Pages | Lattice 萊迪思 | |
GAL22V10D-10產(chǎn)品屬性
- 類型
描述
- 型號
GAL22V10D-10
- 功能描述
Electrically-Erasable PLD
| IC供應(yīng)商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
LATTICE |
01+ |
PLCC28 |
25 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
LATTICE/萊迪斯 |
22+ |
42 |
100000 |
代理渠道/只做原裝/可含稅 |
|||
LATTE/萊迪斯 |
24+ |
NA/ |
3376 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
|||
LATTICE/萊迪斯 |
25+ |
28-PLCC11.51x11.51 |
996880 |
只做原裝,歡迎來電資詢 |
|||
LATTICE |
03+/04 |
PLCC28 |
2760 |
全新原裝進(jìn)口自己庫存優(yōu)勢 |
|||
LATTICE |
24+ |
PLCC-28 |
30617 |
LATTICE專營品牌全新原裝熱賣 |
|||
LATTICE |
24+ |
PLCC28 |
20000 |
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！ |
|||
GAL |
23+ |
65480 |
|||||
LATTICE |
23+ |
PLCC24 |
12800 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
|||
LATTICE |
24+ |
PLCC24 |
13500 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
GAL22V10D-10芯片相關(guān)品牌
GAL22V10D-10規(guī)格書下載地址
GAL22V10D-10參數(shù)引腳圖相關(guān)
- ic交易
- ic廠家
- ic查詢
- IC插座
- ic測試
- ic采購
- IC(集成電路)
- hynix
- hy57v161610
- hs25
- hs20
- hl2608
- HDMI連接器
- HDD
- h3000
- h20r120
- gps模塊
- gpib
- GL850G
- gfd
- GALI-49
- GALI-4
- GALI-39
- GALI-33
- GALI-3
- GALI-29
- GALI-24
- GALI-21
- GALI-2
- GALI-19
- GALI-1
- GALI_59
- GALI_49
- GALI_39
- GALI_29
- GALI_19
- GAL6002
- GAL6001
- GAL504P
- GAL504N
- GAL22V10D-15LJN
- GAL22V10D-15LJI
- GAL22V10D-15LJ
- GAL22V10D15LJ
- GAL22V10D-15LD/883
- GAL22V10D-10QPN
- GAL22V10D-10QP
- GAL22V10D-10QJN
- GAL22V10D-10QJ
- GAL22V10D-10LS
- GAL22V10D-10LPNI
- GAL22V10D-10LPN
- GAL22V10D-10LPI
- GAL22V10D-10LP
- GAL22V10D-10LJNI
- GAL22V10D-10LJN
- GAL22V10D-10LJI
- GAL22V10D-10LJ
- GAL22V10D10LJ
- GAL22V10D-10LD/883
- GAL22V10C-7LPI
- GAL22V10C-7LP
- GAL22V10C-7LJI
- GAL22V10C-7LJ
- GAL22V10C-5LJ
- GAL22V10C-15LPI
- GAL22V10C-15LJI
- GAL22V10C-10LR/883
- GAL22V10C-10LPI
- GAL22V10C-10LP
- GAL22V10C-10LJI
- GAL22V10C-10LJ
- GAL22V10C-10LD/883
- GAL22V10B-7LPI
- GAL22V10B-7LP
- GAL22V10B-7LJ
- GAL22V10B-30LD/883
- GAL22V10B-25QP
- GAL22V10B-25QJ
- GAL22V10B-25LPI
- GAL20V8
- GAL1883
- GAL16V8
- GAH504P
- GAH504N
- GAH404
- GAH403
- GAH402
- GAH401
- GAH304
- GAH303
- GAH302
- GAH301
- GAG01Z
- GAG01Y
- GAG01A
- GAG01
- GABJ506
- GABJ504
- GABJ503
GAL22V10D-10數(shù)據(jù)表相關(guān)新聞
GAL22V10B-20LD/883，GAL22V10B-25LJI，GAL22V10C-10LP，
GAL22V10B-20LD/883，GAL22V10B-25LJI，GAL22V10C-10LP，
2020-4-24GAL22V10D-10LPN，集成電路（IC）
全新原裝，公司現(xiàn)貨銷售
2019-8-21GAL22V10D-15LJN簡單可編程邏輯器件全新原裝現(xiàn)貨特價銷售
GAL22V10D-15LJN簡單可編程邏輯器件全新原裝現(xiàn)貨特價銷售
2019-5-20GAL22V10D-15LPN原裝現(xiàn)貨特價銷售集成電路（IC）
GAL22V10D-15LPN原裝現(xiàn)貨特價銷售集成電路（IC）
2019-5-20GAL20V8C-10LJ公司原裝現(xiàn)貨/隨時可以發(fā)貨
GAL20V8C-10LJ公司原裝現(xiàn)貨/隨時可以發(fā)貨
2019-4-16GAL20V8C-5LJ公司原裝現(xiàn)貨/隨時可以發(fā)貨
GAL20V8C-5LJ公司原裝現(xiàn)貨/隨時可以發(fā)貨
2019-4-16
DdatasheetPDF頁碼索引
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