位置:首頁 > IC中文資料第6245頁 > FSYE923A0R4
型號 | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
---|---|---|---|---|
FSYE923A0R4 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | ||
5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | |||
7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil |
FSYE923A0R4產(chǎn)品屬性
- 類型
描述
- 型號
FSYE923A0R4
- 制造商
INTERSIL
- 制造商全稱
Intersil Corporation
- 功能描述
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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DdatasheetPDF頁碼索引
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