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型號 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
FSL23A0D1

6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin

Intersil

9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K

Intersil

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K

Intersil

FSL23A0D1產(chǎn)品屬性

  • 類型

    描述

  • 型號

    FSL23A0D1

  • 制造商

    INTERSIL

  • 制造商全稱

    Intersil Corporation

  • 功能描述

    6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

更新時間:2025-9-11 23:01:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
FAIRCHILD/仙童
24+
NA/
24
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F
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DIP
65248
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6540
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1983
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ON Sem
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25000
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NA
10826
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25+23+
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40893
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7-LSOP
15000
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FAIRCHI
24+
SMD
12000
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FAIRCHILD
23+
SOP-7
12800
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