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N-Channel MOSFET 500V, 11.5A, 0.7廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

Fast Switching

? FEATURES ? Drain Current ID= 12A@ TC=25℃ ? Drain Source Voltage- : VDSS= 500V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ? Fast Switching ?APPLICATIONS ?Switch mode power supply.

12 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch

Power MOSFETs

FEATURES ? Low Figure-of-Merit Ron x Qg ? 100 Avalanche Tested ? Gate Charge Improved ? Trr/Qrr Improved ? Compliant to RoHS Directive 2002/95/EC

12A, 500V N-CHANNEL POWER MOSFET

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N-Channel 650 V (D-S) MOSFET

文件：1.039369 Mbytes Page：8 Pages