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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=313A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

無(wú)錫固電

New Products, Tips and Tools for Power and Mobile Applications

文件:3.23672 Mbytes Page:12 Pages

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

isc N-Channel MOSFET Transistor

? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤2.0m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operati

ISC

無(wú)錫固電

OptiMOSTM Power-Transistor

Features ? Optimized for high performance SMPS, e.g. sync. rec. ? 100 avalanche tested ? Superior thermal resistance ? N-channel ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

Infineon

英飛凌

New OptiMOS??40V and 60V

文件:1.02174 Mbytes Page:2 Pages

Infineon

英飛凌

更新時(shí)間:2025-9-3 13:44:01
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TO220
880000
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6893
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