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DUAL COOL??PACKAGE POWERTRENCH? MOSFETs

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Dual CoolTM Power Trench? MOSFET 80 V, 60 A, 3.1 m廓

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N 溝道，雙 CoolTM 56 PowerTrench? MOSFET，80V，110A，3.1mΩ

N-Channel PowerTrench? MOSFET 80 V, 42 A, 3.9 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switch

N-Channel Enhancement Mode MOSFET

Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge

Spacial CRN plain door w/o mount.plate. H800xW600xD300 IP66 IK10 RAL7035..

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