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DRV5032 Ultra-Low-Power Digital-Switch Hall Effect Sensor

1 Features ? Industry-leading ultra-low power consumption – 5Hz version: 0.54μA – 20Hz versions: 1.3μA – 80Hz version: 5.2μA ? Operating VCC range: 1.65V to 5.5V ? Operating temperature range: –40°C to +85°C ? Magnetic threshold options (maximum BOP): – DG Version: 3.4mT – DU Version: 3.9

DRV5032 Ultra-Low-Power Digital-Switch Hall Effect Sensor

文件：1.72779 Mbytes Page：40 Pages

Ultra-Low-Power Digital-Switch Hall Effect Sensor

文件：1.38603 Mbytes Page：34 Pages

DRV5032 Ultra-Low-Power Digital-Switch Hall Effect Sensor

文件：1.5915 Mbytes Page：37 Pages

封裝/外殼：TO-236-3，SC-59，SOT-23-3 功能：單極開關(guān) 包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 描述：MAGNETIC SWITCH UNIPOLAR SOT23-3 傳感器，變送器 磁性傳感器 - 開關(guān)（固態(tài)）

1 GHz to 60 GHz, Reflective, Silicon SPDT Switch

GENERAL DESCRIPTION The ADRF5032 is a reflective, single-pole double-throw (SPDT) switch manufactured using the silicon process. The ADRF5032 operates from 1 GHz to 60 GHz with insertion loss of lower than 2.0 dB and isolation of higher than 32 dB. The device has a RF input power handling cap

1 GHz to 60 GHz, Reflective, Silicon SPDT Switch

GENERAL DESCRIPTION The ADRF5032 is a reflective, single-pole double-throw (SPDT) switch manufactured using the silicon process. The ADRF5032 operates from 1 GHz to 60 GHz with insertion loss of lower than 2.0 dB and isolation of higher than 32 dB. The device has a RF input power handling cap

1 GHz to 60 GHz, Reflective, Silicon SPDT Switch

GENERAL DESCRIPTION The ADRF5032 is a reflective, single-pole double-throw (SPDT) switch manufactured using the silicon process. The ADRF5032 operates from 1 GHz to 60 GHz with insertion loss of lower than 2.0 dB and isolation of higher than 32 dB. The device has a RF input power handling cap

18 (16/30) AWG Tinned Copper

文件：411.07 Kbytes Page：4 Pages

Quartz SMD, Ceramic

文件：77.21 Kbytes Page：1 Pages