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CY7C144價(jià)格

參考價(jià)格:¥547.2085

型號(hào):CY7C1440AV25-167BZXC 品牌:Cynergy 3 備注:這里有CY7C144多少錢,2025年最近7天走勢(shì),今日出價(jià),今日競(jìng)價(jià),CY7C144批發(fā)/采購(gòu)報(bào)價(jià),CY7C144行情走勢(shì)銷售排行榜,CY7C144報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
CY7C144

8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy

文件:391.37 Kbytes Page:19 Pages

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

CY7C144

8K x 8/9 Dual-Port Static RAM with SEM, INT, BUSY

文件:607.9 Kbytes Page:20 Pages

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

CY7C144

8K x 8/9 Dual-Port Static RAM with SEM, INT, BUSY

Infineon

英飛凌

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM

Functional Description[1] The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1M x 36/2M x 18 and 512K x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-e

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM

Functional Description The CY7C1441AV33/CY7C1443AV33/CY7C1447AV33[1] are 3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version)

CypressCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

CY7C144產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    CY7C144

  • 功能描述

    靜態(tài)隨機(jī)存取存儲(chǔ)器 36MB(1Mx36) 2.5v 167MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存儲(chǔ)容量

    16 Mbit

  • 組織

    1 M x 16

  • 訪問時(shí)間

    55 ns

  • 電源電壓-最大

    3.6 V

  • 電源電壓-最小

    2.2 V

  • 最大工作電流

    22 uA

  • 最大工作溫度

    + 85 C

  • 最小工作溫度

    - 40 C

  • 安裝風(fēng)格

    SMD/SMT

  • 封裝/箱體

    TSOP-48

  • 封裝

    Tray

更新時(shí)間:2025-9-20 14:33:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
Cypress
22+
165FBGA (15x17)
9000
原廠渠道,現(xiàn)貨配單
CYPRESS/賽普拉斯
25+
BGA
102
原裝正品,假一罰十!
CYPRESS/賽普拉斯
07+
PLCC
2950
原裝現(xiàn)貨 價(jià)格優(yōu)勢(shì)
Cypress(賽普拉斯)
25+
5000
只做原裝 假一罰百 可開票 可售樣
CY
21+
PLCC
1576
十年信譽(yù),只做原裝,有掛就有現(xiàn)貨!
CYPRESS(賽普拉斯)
24+
LQFP-100
5591
百分百原裝正品,可原型號(hào)開票
CYPRESS/賽普拉斯
24+
PLCC
2950
全部原裝現(xiàn)貨優(yōu)勢(shì)產(chǎn)品
CYPRESS
24+
TQFP
8000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
CYPRESS/賽普拉斯
25+
QFP100
12496
CYPRESS/賽普拉斯原裝正品CY7C1440AV33-167AXC即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
CYPRESS10
25+
PLCC
20000
北京

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