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位置：首頁(yè) > IC中文資料第10607頁(yè) > CY14B104NA

CY14B104NA價(jià)格

參考價(jià)格：￥142.8307

型號(hào)：CY14B104NA-BA25XI 品牌：Cynergy 3 備注：這里有CY14B104NA多少錢(qián)，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，CY14B104NA批發(fā)/采購(gòu)報(bào)價(jià)，CY14B104NA行情走勢(shì)銷(xiāo)售排行榜，CY14B104NA報(bào)價(jià)。

型號(hào)	功能描述	生產(chǎn)廠家企業(yè)	LOGO
CY14B104NA	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA	4-Mbit (512 K ? 8/256 K ? 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA20XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA20XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA20XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA20XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA20XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA20XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA25I	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA25I	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA25IT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA25XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA25XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA25XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA25XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA25XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA25XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA45XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA45XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA45XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA45XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA45XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA45XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS20XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS20XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS20XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS20XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS20XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS20XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS25XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS25XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS25XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS25XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS25XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS25XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS45XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS45XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS45XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS45XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS45XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZS45XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZSP20XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZSP20XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZSP20XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZSP20XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZSP25XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZSP25XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZSP25XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZSP25XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZSP25XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZSP25XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZSP45XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZSP45XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZSP45XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZSP45XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZSP45XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-ZSP45XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA20XI	4-Mbit (512 K ? 8/256 K ? 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress
CY14B104NA-BA20XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司	Cypress

CY14B104NA產(chǎn)品屬性

類型
描述
型號(hào)
CY14B104NA
制造商
CYPRESS
制造商全稱
Cypress Semiconductor
功能描述
4 Mbit(512K x 8/256K x 16) nvSRAM

CY14B104NA供應(yīng)商更多...

更新時(shí)間：2025-9-19 17:24:00

IC供應(yīng)商	芯片型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市航潤(rùn)創(chuàng)能電子集團(tuán)有限公司	CY14B104NA-BA20XI	cypress	21+	N/A	2101	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市凌旭科技有限公司	CY14B104NA-ZS45XIT	CYPRESS	21+	TSOP44	2000	十年信譽(yù),只做原裝,有掛就有現(xiàn)貨!	詢價(jià)
深圳市正納電子有限公司	CY14B104NA-BA20XI	Cypress(賽普拉斯)	23+	NA	20094	正納10年以上分銷(xiāo)經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持	詢價(jià)
深圳市訊順達(dá)科技有限公司	CY14B104NA-ZS45XI	CYPRESS	21+	TSOP-44	1000	全新原裝公司現(xiàn)貨	詢價(jià)
深圳市德正通電子有限公司	CY14B104NA-ZS45XIT	CYPRESS	1731	0	924	原裝正品現(xiàn)貨,德為本,正為先,通天下!	詢價(jià)
深圳市匯萊威科技有限公司	CY14B104NA-BA45XI	CYPRESS	24+	BGA	13500	免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系	詢價(jià)
萬(wàn)三科技(深圳)有限公司	CY14B104NA-BA20XI	Cypress(賽普拉斯)	25+	封裝	500000	源自原廠成本,高價(jià)回收工廠呆滯	詢價(jià)
深圳市拓億芯電子有限公司	CY14B104NA-BA20XI	CYPRESS	23+	BGA	30000	代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市冠億通科技有限公司	CY14B104NA-ZSP45XI	Cypress(賽普拉斯)	25+		5000	只做原裝假一罰百可開(kāi)票可售樣	詢價(jià)
深圳市禾興威科技有限公司	CY14B104NA-BA20XI	Cypress	23+	NA	6800	原裝正品,力挺實(shí)單	詢價(jià)

CY14B104NA芯片相關(guān)品牌

CY14B104NA規(guī)格書(shū)下載地址

CY14B104NA參數(shù)引腳圖相關(guān)

DC-AC
d880
d870
d828
d7805
d7804
d641
d609
d415
d408
d403
d402
d325
d2007
d2004
d2002
d126
d1004
d1002
c波段
CY2077
CY2071A
CY2040
CY2037
CY1AM
CY19BS
CY19BPS
CY19BP
CY19B
CY19AS
CY19A
CY16BS
CY16BPS
CY16BP
CY16B
CY15AS
CY15A
CY14BS
CY14BPS
CY14BP
CY14B256LA-SP25XI
CY14B256KA-SP45XI
CY14B256KA-SP25XI
CY14B256I-SFXI
CY14B108N-ZSP45XI
CY14B108N-ZSP25XI
CY14B108N-BA25XI
CY14B108M-ZSP45XI
CY14B108L-ZS45XI
CY14B108L-ZS25XI
CY14B108L-BA25XI
CY14B108K-ZS45XI
CY14B108K-ZS25XI
CY14B104NA-ZSP45XI
CY14B104NA-ZSP25XI
CY14B104NA-ZS45XI
CY14B104NA-ZS25XI
CY14B104NA-ZS20XI
CY14B104NA-BA45XI
CY14B104NA-BA25XI
CY14B104M-ZSP45XI
CY14B104LA-ZS45XI
CY14B104LA-ZS25XI
CY14B104LA-BA25XI
CY14B104K-ZS45XI
CY14B104K-ZS25XI
CY14B101Q2-LHXI
CY14B101Q2A-SXI
CY14B101Q1A-SXI
CY14B101P-SFXI
CY14B101PA-SFXIT
CY14B101PA-SFXI
CY14B101NA-ZS45XI
CY14B101NA-ZS25XI
CY14B101LA-ZS45XI
CY14B101LA-ZS25XI
CY14B101LA-ZS20XI
CY14B101LA-SZ45XI
CY14B101LA-SZ25XI
CY14B101LA-SP45XI
CY14B
CY14AS
CY14APS
CY14AP
CY14ACS
CY14AC
CY14A
CY132
CY12BS
CY12BPS
CY12BP
CY12B
CY12AS
CY12A
CY123
CY-122B
CY-122A
CY-121B
CY-121A
CY11BS

CY14B104NA數(shù)據(jù)表相關(guān)新聞

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CY14B108N-BA25XI XILINX(賽靈思) ，ALTERA（阿爾特拉），軍工級(jí)IC專業(yè)優(yōu)勢(shì)渠道
2019-10-18

DdatasheetPDF頁(yè)碼索引

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