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Silicon N-Channel Power MOSFET

Features： - Fast Switching - LowON Resistance(Rdson≤1.3Ω) - Low Gate Charge (Typical Data:24nC) - Low Reverse transfer capacitances(Typical:5.5pF) - 100Single Pulse avalanche energy Test

Silicon N-Channel Power MOSFET

Features： - Fast Switching - LowON Resistance(Rdson≤1.3Ω) - Low Gate Charge (Typical Data:24nC) - Low Reverse transfer capacitances(Typical:5.5pF) - 100Single Pulse avalanche energy Test

7.4 Amps, 600 Volts N-CHANNEL MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

isc N-Channel Mosfet Transistor

? DESCRITION ? Designed for high efficiency switch mode power supply. ? FEATURES ? Drain Current –ID= 7A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ? Avalanche Energy Specified ? Fast Switching ? Simple Drive Requirem

7 Amps竊?00Volts N-Channel MOSFET

■ Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features ● RDS(ON) = 1.20?@VGS = 10 V ● Low gate cha

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

7A 600V N-channel Enhancement Mode Power MOSFET

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