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型號(hào) 功能描述 生產(chǎn)廠(chǎng)家 企業(yè) LOGO 操作
CJP06N60

Power filed Effect Transistor

FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature

JIANGSU

長(zhǎng)電科技

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

Fuji

富士通

IGBT with integrated diode in packages offering space saving advantage

文件：1.92413 Mbytes Page：16 Pages

Infineon

英飛凌

IGBT with integrated diode in packages offering space saving advantage

文件：1.74081 Mbytes Page：16 Pages

Infineon

英飛凌

POWER FIELD EFFECT TRANSISTOR

文件：191.5 Kbytes Page：6 Pages

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

CJP06N60產(chǎn)品屬性

  • 類(lèi)型

    描述

  • 型號(hào)

    CJP06N60

  • 功能描述

    MOSFET

更新時(shí)間：2025-9-13 12:00:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
長(zhǎng)晶科技
21+
TO-220-3L
20
全新原裝鄙視假貨
CJ/長(zhǎng)電
23+
TO-220-3L
300000
原廠(chǎng)授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
24+
N/A
62000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
長(zhǎng)電
23+
TO-220-3L
7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
CJ/長(zhǎng)電
24+
TO-220-3L
50000
全新原裝,一手貨源,全場(chǎng)熱賣(mài)!
CJ/長(zhǎng)電
2022+
TO-220
50000
原廠(chǎng)代理 終端免費(fèi)提供樣品
長(zhǎng)電
2015
TO-220-3L
10950
CJ/長(zhǎng)電
24+
TO-220-3L
50000
只做原裝，歡迎詢(xún)價(jià)，量大價(jià)優(yōu)
CJ/長(zhǎng)電
2015
TO-220-3L
10971
CJ/長(zhǎng)電
21+
TO-220-3L
30000
百域芯優(yōu)勢(shì) 實(shí)單必成 可開(kāi)13點(diǎn)增值稅發(fā)票

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