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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -18A,RDS(ON) = 70mW @VGS = -10V. RDS(ON) = 120mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -15A, RDS(ON) = 70m? @VGS = -10V. RDS(ON) = 120m? @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -15A, RDS(ON) = 70mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 120mW @VGS = -4.5V. Lead free product is acquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -18A,RDS(ON) = 70mW @VGS = -10V. RDS(ON) = 120mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

Single P-Channel Enhancement Mode MOSFET

CET

華瑞

更新時(shí)間：2025-8-15 15:36:01
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
SR
23+
TO-251
5000
原裝正品,假一罰十
PHI
24+
TSSOP
28900
公司現(xiàn)貨庫(kù)存,支持實(shí)單
CET
23+
TO-251
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
CET
23+
TO-251
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
CET(華瑞)
2447
TO-251(I-PAK)
105000
80個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
CET/華瑞
24+
NA/
15040
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
CET/華瑞
23+
TO-251
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
CET
25+
TO-251
15040
原裝正品,假一罰十!
CET
21+
TO-251
15040
原裝現(xiàn)貨假一賠十
CET
07+
TO-251
15040
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力

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