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CEU4價格
參考價格:¥0.5101
型號:CEU4J2X7R1H104K125AE 品牌:TDK 備注:這里有CEU4多少錢,2025年最近7天走勢,今日出價,今日競價,CEU4批發(fā)/采購報價,CEU4行情走勢銷售排行榜,CEU4報價。型號 | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
---|---|---|---|---|
CEU4 | Multilayer Ceramic Chip Capacitors 文件:60.69 Kbytes Page:5 Pages | TDK 東電化 | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 15A, RDS(ON) = 85mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 華瑞 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS(ON) = 85mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired. | CET-MOS 華瑞 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 15A, RDS(ON) = 80m? @VGS = 10V. RDS(ON) = 95m? @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 華瑞 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 16A, RDS(ON) = 75mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 90mW @VGS = 5V. Lead free product is acquired. | CET-MOS 華瑞 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 華瑞 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 37A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired. | CET-MOS 華瑞 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 40A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant | CET-MOS 華瑞 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 47A, RDS(ON) = 10.2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 13 mW @VGS = 4.5V. | CET-MOS 華瑞 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -31A, RDS(ON) = 18.5mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 25mW @VGS = -4.5V. RoHS compliant. | CET-MOS 華瑞 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 20V, 36A, RDS(ON) = 20m? @VGS = 4.5V. RDS(ON) = 30m? @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 華瑞 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -40V, -28A, RDS(ON) = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 華瑞 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 40V, 24A, RDS(ON) = 30mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 華瑞 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 24A, RDS(ON) = 28mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 42mW @VGS = 4.5V. Lead free product is acquired. | CET-MOS 華瑞 | |||
Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES ■ 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V , -12A , RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capab | CET 華瑞 | |||
Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 46mW @VGS = 4.5V. -40V , -12A , RDS(ON) = 45mW @VGS = 10V. RDS(ON) = 65mW @VGS = 4.5V. TO-252-4L package. Lead free product is acquir | CET-MOS 華瑞 | |||
Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES ■ 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V , -9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabil | CET 華瑞 | |||
Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-252-4L package. RDS(ON) = 46mW @VGS = 4.5V. Lead free product is acquired. -40V , -9A , RDS(ON) = 72mW @VGS = 10V. RDS(ON) = 110mW @VGS = 4. | CET-MOS 華瑞 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -40V, -20A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 華瑞 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -20A, RDS(ON) = 42mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 65mW @VGS = -4.5V. Lead free product is acquired. | CET-MOS 華瑞 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -30V, -33A, RDS(ON) = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 華瑞 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -33A, RDS(ON) = 18mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 30mW @VGS = -4.5V. Lead free product is acquired. | CET-MOS 華瑞 | |||
N-Channel Enhancement Mode Field Effect Transistor 文件:404.2 Kbytes Page:4 Pages | CET 華瑞 | |||
N-Channel Enhancement Mode Field Effect Transistor 文件:403.11 Kbytes Page:4 Pages | CET 華瑞 | |||
N-Channel 60 V (D-S) MOSFET 文件:1.00668 Mbytes Page:8 Pages | VBSEMI 微碧半導(dǎo)體 | |||
N-Channel MOSFET uses advanced SGT technology 文件:988.95 Kbytes Page:4 Pages | DOINGTER 杜因特 | |||
N-Channel MOSFET uses advanced trench technology 文件:764.3 Kbytes Page:5 Pages | DOINGTER 杜因特 | |||
Dual Enhancement Mode Field Effect Transistor (N and P Channel) 文件:590.3 Kbytes Page:7 Pages | CET 華瑞 | |||
P-Channel 30-V (D-S) MOSFET 文件:1.025589 Mbytes Page:9 Pages | VBSEMI 微碧半導(dǎo)體 | |||
P-Channel Enhancement Mode Field Effect Transistor 文件:106.25 Kbytes Page:4 Pages | CET 華瑞 | |||
Automotive Grade ( Serial Design ) 文件:138.83 Kbytes Page:1 Pages | TDK 東電化 | |||
封裝/外殼:0805(2012 公制) 包裝:剪切帶(CT)帶盒(TB) 描述:CAP CER 0.1UF 50V X7R 0805 電容器 陶瓷電容器 | TDK 東電化 | |||
封裝/外殼:0805(2012 公制) 包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 描述:CAP CER 0.1UF 50V X7R 0805 電容器 陶瓷電容器 | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.83 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.76 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.77 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:139.05 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:139.05 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.64 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.63 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.83 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.83 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.85 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.84 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.97 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.97 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.63 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.64 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.87 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.87 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.82 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.81 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.98 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:138.98 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:139.06 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:139.05 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:139.15 Kbytes Page:1 Pages | TDK 東電化 | |||
Automotive Grade ( Serial Design ) 文件:139.15 Kbytes Page:1 Pages | TDK 東電化 |
CEU4產(chǎn)品屬性
- 類型
描述
- 型號
CEU4
- 制造商
TDK
- 制造商全稱
TDK Electronics
- 功能描述
Multilayer Ceramic Chip Capacitors
IC供應(yīng)商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TDK/東電化 |
15+ROHS |
SMD |
187760 |
一級質(zhì)量保證長期穩(wěn)定提供貨優(yōu)價美 |
|||
CETSEMI |
24+ |
TO-252 |
499624 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
|||
CET |
23+ |
TO252 |
10310 |
原廠原裝正品 |
|||
CET |
24+ |
TO-252 |
27500 |
原裝正品,價格最低! |
|||
CET/華瑞 |
25+ |
TO-252 |
156792 |
明嘉萊只做原裝正品現(xiàn)貨 |
|||
CET/華瑞 |
24+ |
TO-252 |
62000 |
只做原廠渠道 可追溯貨源 |
|||
CET |
23+ |
原廠原包 |
19960 |
只做進(jìn)口原裝 終端工廠免費送樣 |
|||
TDK |
2019+ |
SMD |
120000 |
原盒原包裝 可BOM配套 |
|||
CET/華瑞 |
24+ |
TO-252 |
60000 |
||||
CET |
24+ |
TO-252 |
663300 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
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DdatasheetPDF頁碼索引
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