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CEU4價格

參考價格:¥0.5101

型號:CEU4J2X7R1H104K125AE 品牌:TDK 備注:這里有CEU4多少錢,2025年最近7天走勢,今日出價,今日競價,CEU4批發(fā)/采購報價,CEU4行情走勢銷售排行榜,CEU4報價。
型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
CEU4

Multilayer Ceramic Chip Capacitors

文件:60.69 Kbytes Page:5 Pages

TDK

東電化

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 15A, RDS(ON) = 85mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 15A, RDS(ON) = 85mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 15A, RDS(ON) = 80m? @VGS = 10V. RDS(ON) = 95m? @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 16A, RDS(ON) = 75mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 90mW @VGS = 5V. Lead free product is acquired.

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 37A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 200V, 40A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 47A, RDS(ON) = 10.2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 13 mW @VGS = 4.5V.

CET-MOS

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -31A, RDS(ON) = 18.5mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 25mW @VGS = -4.5V. RoHS compliant.

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 36A, RDS(ON) = 20m? @VGS = 4.5V. RDS(ON) = 30m? @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -28A, RDS(ON) = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 24A, RDS(ON) = 30mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 24A, RDS(ON) = 28mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 42mW @VGS = 4.5V. Lead free product is acquired.

CET-MOS

華瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V , -12A , RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capab

CET

華瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 46mW @VGS = 4.5V. -40V , -12A , RDS(ON) = 45mW @VGS = 10V. RDS(ON) = 65mW @VGS = 4.5V. TO-252-4L package. Lead free product is acquir

CET-MOS

華瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V , -9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabil

CET

華瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-252-4L package. RDS(ON) = 46mW @VGS = 4.5V. Lead free product is acquired. -40V , -9A , RDS(ON) = 72mW @VGS = 10V. RDS(ON) = 110mW @VGS = 4.

CET-MOS

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -20A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -20A, RDS(ON) = 42mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 65mW @VGS = -4.5V. Lead free product is acquired.

CET-MOS

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -33A, RDS(ON) = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -33A, RDS(ON) = 18mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 30mW @VGS = -4.5V. Lead free product is acquired.

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

文件:404.2 Kbytes Page:4 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

文件:403.11 Kbytes Page:4 Pages

CET

華瑞

N-Channel 60 V (D-S) MOSFET

文件:1.00668 Mbytes Page:8 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel MOSFET uses advanced SGT technology

文件:988.95 Kbytes Page:4 Pages

DOINGTER

杜因特

N-Channel MOSFET uses advanced trench technology

文件:764.3 Kbytes Page:5 Pages

DOINGTER

杜因特

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

文件:590.3 Kbytes Page:7 Pages

CET

華瑞

P-Channel 30-V (D-S) MOSFET

文件:1.025589 Mbytes Page:9 Pages

VBSEMI

微碧半導(dǎo)體

P-Channel Enhancement Mode Field Effect Transistor

文件:106.25 Kbytes Page:4 Pages

CET

華瑞

Automotive Grade ( Serial Design )

文件:138.83 Kbytes Page:1 Pages

TDK

東電化

封裝/外殼:0805(2012 公制) 包裝:剪切帶(CT)帶盒(TB) 描述:CAP CER 0.1UF 50V X7R 0805 電容器 陶瓷電容器

TDK

東電化

封裝/外殼:0805(2012 公制) 包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 描述:CAP CER 0.1UF 50V X7R 0805 電容器 陶瓷電容器

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.83 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.76 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.77 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:139.05 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:139.05 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.64 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.63 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.83 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.83 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.85 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.84 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.97 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.97 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.63 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.64 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.87 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.87 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.82 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.81 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.98 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:138.98 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:139.06 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:139.05 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:139.15 Kbytes Page:1 Pages

TDK

東電化

Automotive Grade ( Serial Design )

文件:139.15 Kbytes Page:1 Pages

TDK

東電化

CEU4產(chǎn)品屬性

  • 類型

    描述

  • 型號

    CEU4

  • 制造商

    TDK

  • 制造商全稱

    TDK Electronics

  • 功能描述

    Multilayer Ceramic Chip Capacitors

更新時間:2025-9-3 13:51:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
TDK/東電化
15+ROHS
SMD
187760
一級質(zhì)量保證長期穩(wěn)定提供貨優(yōu)價美
CETSEMI
24+
TO-252
499624
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
CET
23+
TO252
10310
原廠原裝正品
CET
24+
TO-252
27500
原裝正品,價格最低!
CET/華瑞
25+
TO-252
156792
明嘉萊只做原裝正品現(xiàn)貨
CET/華瑞
24+
TO-252
62000
只做原廠渠道 可追溯貨源
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費送樣
TDK
2019+
SMD
120000
原盒原包裝 可BOM配套
CET/華瑞
24+
TO-252
60000
CET
24+
TO-252
663300
鄭重承諾只做原裝進(jìn)口現(xiàn)貨

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