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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 51A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=55A,RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 51A , RDS(ON) = 10mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 17mW @VGS = 4.5V. RoHS compliant.

12 Gbps PCIe Gen3 SAS/SATA RAID Adapters

Highlights ? maxCache 4.0 caching software ? RAID levels: 0, 1, 5, 6, 10, 50, 60, 1 ADM and 10 ADM ? Supports simultaneous use of RAID and raw devices (mixed mode) ? Fifth-generation Zero-Maintenance Cache Protection (ZMCP) ? Up to 24 native SAS/SATA ports in a LP/MD2 design ? 12 Gbps and 6

3M??Mining Cable Splice Kits,

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Large Dome Plugs

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Raspberry Pi NoIR Camera Board v2 - 8 Megapixels

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Definite Purpose Contactor 3-pole, 120 FLA AC Coil

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