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型號(hào) 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
CEU16N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 13.3A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

CEU16N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 13.3A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

CET-MOS

華瑞

CEU16N10

N-Channel MOSFET uses advanced trench technology

文件：5.01082 Mbytes Page：4 Pages

DOINGTER

杜因特

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 13.3A, RDS(ON) = 115mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant. RDS(ON) = 125mW @VGS = 5V.

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 12A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 165mW @VGS = 3V. RDS(ON) = 130mW @VGS = 5V.

CET-MOS

華瑞

N-Channel MOSFET uses advanced trench technology

文件：5.01071 Mbytes Page：4 Pages

DOINGTER

杜因特

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 15.2A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 15.2A, RDS(ON) = 115mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 125mW @VGS = 5V.

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 11A, RDS(ON) = 120mW @VGS = 10V. RDS(ON) = 135mW @VGS = 5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

華瑞

CEU16N10產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    CEU16N10

  • 制造商

    CET

  • 制造商全稱

    Chino-Excel Technology

  • 功能描述

    N-Channel Enhancement Mode Field Effect Transistor

更新時(shí)間：2025-8-31 23:01:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
CET/華瑞
24+
NA/
520
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
TDK
24+
2kreel
9480
公司現(xiàn)貨庫(kù)存,支持實(shí)單
VB
25+
TO252D-PAK
10000
原裝正品,假一罰十!
TO252D-PAK
22+
16
100000
代理渠道/只做原裝/可含稅
CET
1726+
TO-252
6528
只做進(jìn)口原裝正品現(xiàn)貨,假一賠十!
CET/華瑞
24+
TO-252
499553
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
VBsemi
24+
TO252
11000
原裝正品 有掛有貨 假一賠十
CET/華瑞
25+
TO-252
156571
明嘉萊只做原裝正品現(xiàn)貨
CET/華瑞
新年份
TO-252
67410
一級(jí)代理原裝正品現(xiàn)貨,支持實(shí)單!
CET/華瑞
25+
TO-252
33955
CET/華瑞全新特價(jià)CEU16N10L即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨

CEU16N10芯片相關(guān)品牌

CEU16N10規(guī)格書下載地址

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CEU16N10數(shù)據(jù)表相關(guān)新聞

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