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型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
CEU02N7G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 700V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

CEU02N7G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V, 1.6A, RDS(ON) = 6.75W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

CET-MOS

華瑞

CEU02N7G

N-Channel MOSFET uses advanced trench technology

文件：892.2 Kbytes Page：5 Pages

DOINGTER

杜因特

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 720V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. 750V@Tc=150 °C ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 720V, 1.6A, RDS(ON) = 6.75W @VGS = 10V. 750V@Tc=150 C Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

CET-MOS

華瑞

Single-Ended Cordsets

Basic features Approval/Conformity CE EAC WEEE

Balluff

巴魯夫

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 700V, 1.6A, RDS(ON) = 6.6? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

CEU02N7G產(chǎn)品屬性

  • 類型

    描述

  • 型號

    CEU02N7G

  • 制造商

    CET

  • 制造商全稱

    Chino-Excel Technology

  • 功能描述

    N-Channel Enhancement Mode Field Effect Transistor

更新時間：2025-8-31 23:01:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
CET/華瑞
24+
NA/
30250
原裝現(xiàn)貨,當天可交貨,原型號開票
TDK
24+
SMD
11016
公司現(xiàn)貨庫存,支持實單
CET
25+
TO-251
27000
原裝正品,假一罰十!
CET
07+
TO-251
27000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
CET/華瑞
2022+
TO-252
32500
原廠代理 終端免費提供樣品
CET/華瑞
2511
TO-252
360000
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價
CET/華瑞
23+
TO-251
27000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
CET/華瑞
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
CET
23+24
TO-252
59630
主營原裝MOS,二三級管,肖特基,功率場效應(yīng)管
CET
21+
TO-251
27000
原裝現(xiàn)貨假一賠十

CEU02N7G芯片相關(guān)品牌

CEU02N7G規(guī)格書下載地址

CEU02N7G參數(shù)引腳圖相關(guān)

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