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型號(hào) 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
CEU01N6

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 0.9A, RDS(ON) = 15 ? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 0.9A, RDS(ON) = 15W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 1.1A, RDS(ON) = 12W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

Inductive Sensors

BES 517-398-NO-C-05 Basic features Approval/Conformity CE UKCA cULus WEEE Basic standard IEC 60947-5-2

Balluff

巴魯夫

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 0.9A, RDS(ON) = 15 ? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 1.1A, RDS(ON) = 12W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：85.87 Kbytes Page：4 Pages

CET

華瑞

CEU01N6產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    CEU01N6

  • 功能描述

    600V N Channel MOS

更新時(shí)間：2025-8-31 23:01:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
CET/華瑞
24+
NA/
2500
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
KOA Speer
24+
N/A
17860
公司現(xiàn)貨庫存,支持實(shí)單
CET
25+
TO-252
3250
原裝正品,假一罰十!
CET/華瑞
22+
TO-252
100000
代理渠道/只做原裝/可含稅
SR
23+
TO-252
5000
原裝正品,假一罰十
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
CET/華瑞
2022+
TO-252
3250
原廠代理 終端免費(fèi)提供樣品
CET/華瑞
2511
TO-252
360000
電子元器件采購(gòu)降本 30%!盈慧通原廠直采,砍掉中間差價(jià)
-
23+
NA
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
CET/華瑞
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨

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CEU01N6規(guī)格書下載地址

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