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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -8.8A, RDS(ON) = 24m? @VGS = -10V. RDS(ON) = 35m? @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-223 package.

P-Channel 35 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? 100 UIS Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Load Switches, Adaptor Switch - Notebook PCs

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -8.8A, RDS(ON) = 24mW @VGS = -10V. RDS(ON) = 35mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-223 package. Lead free product is acquired.

P-Channel Enhancement Mode Power MOSFET

Description The 4435 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

ARX4435 Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435 and ARX4435FP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The model ARX4435 and ARX4435FP perform the front-end analog function of inputting and outputtin

P-Channel MOSFET

Plastic-Encapsulate Mosfets FEATURES ? Advanced Trench Process Technology ? High Density Cell Design for Ultra Low On-Resistance ? VDS=-30V,ID=-8A ? RDS(on) (m-ohm) 0.020 @ VGS = - 10V ,ID= -8A 0.030 @ VGS = -4.5V,ID= -5A APPLICATIONS ? Load Switches ? B

P-Channel 30-V (D-S) MOSFET

文件：1.00935 Mbytes Page：9 Pages

DELAY MODULES,TTL,SURFACE MOUNTED

文件：137.17 Kbytes Page：1 Pages