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Silicon Carbide Schottky Diode Z-Rec? Rectifier

Features ? 650-Volt Schottky Rectifier ? Zero Reverse Recovery Current ? Zero Forward Recovery Voltage ? High-Frequency Operation ? Temperature-Independent Switching Behavior ? Extremely Fast Switching ? Positive Temperature Coefficient on VF Benefits ? Replace Bipolar with Unipolar Recti

封裝/外殼：TO-252-3，DPak（2 引線 + 接片），SC-63 包裝：管件 描述：DIODE SCHOTTKY 650V 32A TO252-2 分立半導體產品 二極管 - 整流器 - 單

SiC肖特基二極管

650 V Discrete Silicon Carbide Schottky Diodes

Silicon Carbide Schottky Diode

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封裝/外殼：TO-252-3，DPak（2 引線 + 接片），SC-63 包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 描述：ZRECTM 10A, 650V SIC SCHOTTKY DI 分立半導體產品 二極管 - 整流器 - 單

Z-RecTM Rectifiers and Zero-Recovery? Rectifiers

Z-REC? RECTIFIERS and ZERO-RECOVERY? RECTIFIERS SILICON CARBIDE Z-FET? MOSFET

Silicon Carbide Schottky Diode

Z-REC? RECTIFIERS and ZERO-RECOVERY? RECTIFIERS SILICON CARBIDE Z-FET? MOSFET

3rd Generation 650 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

650-V Direct WBG Diode

Key Features: ?SiC performance ?Easy paralleling ?High current carrying capability ?Very low junction capacitance ?Highly stable VFand QRRat elevated temperatures