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Silicon NPN transistor in a TO-92LM Plastic Package

Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features Low saturation voltage, high speed switching time, complementary to 2SA1020. Applications Power amplifier and switching applications.

Power Amplifier Applications Power Switching Applications

Power Amplifier Applications Power Switching Applications ? Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A) ? High collector power dissipation: PC= 900 mW ? High-speed switching: tstg= 1.0 μs (typ.) ? Complementary to 2SA1020.

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

isc Silicon NPN Pow Transistor

DESCRIPTION ? Silicon NPN epitaxial type ? Low saturation voltage ? Complementary to 2SA1020 ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Power amplifier applications ? Power switching applications

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) ● High Speed Switching Time: tstg=1μs(Typ.) ● Complementary to 2SA1020

NPN Plastic-Encapsulate Transistor

Features ? Collector of 0.9Watts of Power Dissipation. ? Collector-current 2.0A ? Operating and storage junction temperature range: -55
to +150
? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1 ? Lead Free Finish/Rohs Compliant (PSuffix designates RoHS

NPN Plastic Encapsulated Transistor

FEATURES - Low saturation voltage：VCE(sat)=0.5V(Max)(IC=1A) - High speed switching time：tstg=1μs(Typ.) - Complementary to 2SA1020

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 900 mW (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Plastic Encapsulated Transistor

文件：622.41 Kbytes Page：2 Pages

NPN Plastic-Encapsulate Transistor

文件：498.23 Kbytes Page：2 Pages

700/800 WATTS (AC) DC/D CSINGLE OUTPUT

文件：427.04 Kbytes Page：1 Pages

NPN Plastic Encapsulated Transistor

文件：217.8 Kbytes Page：3 Pages

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

文件：210.83 Kbytes Page：4 Pages

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

文件：259.7 Kbytes Page：4 Pages

三極管

Silicon NPN Epitaxial Type (PCT Process)

文件：139.74 Kbytes Page：5 Pages

Stock and Custom* Colors for Dome Plugs and Shorty Plugs

文件：89.88 Kbytes Page：1 Pages